Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene （EG） films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition （CVD） graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG gro...

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Published inChinese physics B Vol. 22; no. 7; pp. 37 - 40
Main Author 郝昕 陈远富 王泽高 刘竞博 贺加瑞 李言荣
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
6H-SiC
Chemical vapor deposition
CVD
Epitaxial growth
Graphene
Illumination
Optoelectronics
Photocurrent
Photoelectric effect
Silicon carbide
Xenon lamps
光电响应特性
光电应用
生长
石墨
硅外延
碳化硅
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/7/076804

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Summary:Photoelectrical response characteristics of epitaxial graphene （EG） films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition （CVD） graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.
Bibliography:Photoelectrical response characteristics of epitaxial graphene （EG） films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition （CVD） graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.
Hao Xin, Chen Yuan-Fu , Wang Ze-Gao, Liu Jing-Bo, He Jia-Rui, and Li Yan-Rong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
epitaxial graphene;photoelectrical response;oxygen absorption
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/7/076804