李言荣, 郝. 陈. 王. 刘. 贺. (2013). Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC. Chinese physics B, 22(7), 37-40. https://doi.org/10.1088/1674-1056/22/7/076804
Chicago Style (17th ed.) Citation李言荣, 郝昕 陈远富 王泽高 刘竞博 贺加瑞. "Significant Photoelectrical Response of Epitaxial Graphene Grown on Si-terminated 6H-SiC." Chinese Physics B 22, no. 7 (2013): 37-40. https://doi.org/10.1088/1674-1056/22/7/076804.
MLA (9th ed.) Citation李言荣, 郝昕 陈远富 王泽高 刘竞博 贺加瑞. "Significant Photoelectrical Response of Epitaxial Graphene Grown on Si-terminated 6H-SiC." Chinese Physics B, vol. 22, no. 7, 2013, pp. 37-40, https://doi.org/10.1088/1674-1056/22/7/076804.
Warning: These citations may not always be 100% accurate.