Dual-gate lateral double-diffused metal—oxide semiconductor with ultra-low specific on-resistance - 范杰 汪志刚 张波 罗小蓉 (Chinese physics B, 2013)
Keywords: Channels; Equivalence; Gates; LDMOS; Metal oxide semiconductors; Metal oxides; Oxides; Semiconductors; Trenches; Voltage; 仿真结果; 低导通电阻; 击穿电压; 双扩散; 双门; 电场分布; 金属氧化物半导体