Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer

In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The spe...

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Published inChinese physics B Vol. 21; no. 8; pp. 570 - 573
Main Author 张倩 张玉明 元磊 张义门 汤晓燕 宋庆文
Format Journal Article
LanguageEnglish
Published 01.08.2012
Subjects
4H-SiC
Breakdown
Contact resistance
Electric potential
Electrical resistivity
Emittance
Gain
Junction transistors
Semiconductor devices
Voltage
制备
双极
外延层
电极电流密度
电流增益
结型晶体管
表征
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/8/088502

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Summary:In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively.
Bibliography:In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively.
4H-SiC, bipolar junction transistors, common-emitter current gain, specific onresistance, open-base breakdown voltage
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/8/088502