Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode - 李亮 杨林安 周小伟 张进成 郝跃 (Chinese physics B, 2013)
Keywords: Density; Gallium nitrides; GaN; Gunn diodes; Luminescence; Origins; Photoluminescence; Point defects; Secondary ion mass spectroscopy; Transmission electron microscopy; 光致发光; 太赫兹; 点缺陷; 特性测定; 电压; 电容; 耿氏二极管