High sum-frequency generation in dielectric/antiferromagnet/Ag sandwich structures

We present a method to increase the sum-frequency (SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO2/MnF2...

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Published inChinese physics B Vol. 23; no. 5; pp. 556 - 562
Main Author 付淑芳 梁红 周胜 王选章
Format Journal Article
LanguageEnglish
Published 01.05.2014
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/5/057503

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Abstract We present a method to increase the sum-frequency (SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO2/MnF2/Ag and ZnF2/MnF2/Ag structures show that the SF outputs on the upper film increase a few times as compared to those of a single AF film when the thickness of the AF film is one-quarter of the vacuum wavelength. Moreover, the SF outputs generated near the higher resonant frequency will be higher than those obtained near the lower resonant frequency. An optimum AF film thickness is achieved through investigating its effect on the SF outputs in the two different dielectric sandwich structures.
AbstractList We present a method to increase the sum-frequency (SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO sub(2)/MnF sub(2)/Ag and ZnF sub(2)/MnF sub(2)/Ag structures show that the SF outputs on the upper film increase a few times as compared to those of a single AF film when the thickness of the AF film is one-quarter of the vacuum wavelength. Moreover, the SF outputs generated near the higher resonant frequency will be higher than those obtained near the lower resonant frequency. An optimum AF film thickness is achieved through investigating its effect on the SF outputs in the two different dielectric sandwich structures.
We present a method to increase the sum-frequency (SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO2/MnF2/Ag and ZnF2/MnF2/Ag structures show that the SF outputs on the upper film increase a few times as compared to those of a single AF film when the thickness of the AF film is one-quarter of the vacuum wavelength. Moreover, the SF outputs generated near the higher resonant frequency will be higher than those obtained near the lower resonant frequency. An optimum AF film thickness is achieved through investigating its effect on the SF outputs in the two different dielectric sandwich structures.
Author 付淑芳 梁红 周胜 王选章
AuthorAffiliation Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education,School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China School of Electric Engineering, Harbin University of Science and Technology, Harbin 150080, China School of Science, Harbin University, Harbin 150086, China
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Cites_doi 10.1016/j.jmmm.2011.08.006
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Notes sum-frequency generation, antiferromagnetic film, resonant frequency, nonlinear response
Fu Shu-Fang, Liang Hong, Zhou Sheng, Wang Xuan-Zhang( 1.Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China ;2. School of Electric Engineering, Harbin University of Science and Technology, Harbin 150080, China ;3.School of Science, Harbin University, Harbin 150086, China)
11-5639/O4
We present a method to increase the sum-frequency (SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two incident waves simultaneously illuminate the upper surface, one is oblique and the other is normal to it. Numerical calculations based on the SiO2/MnF2/Ag and ZnF2/MnF2/Ag structures show that the SF outputs on the upper film increase a few times as compared to those of a single AF film when the thickness of the AF film is one-quarter of the vacuum wavelength. Moreover, the SF outputs generated near the higher resonant frequency will be higher than those obtained near the lower resonant frequency. An optimum AF film thickness is achieved through investigating its effect on the SF outputs in the two different dielectric sandwich structures.
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Snippet We present a method to increase the sum-frequency (SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two...
We present a method to increase the sum-frequency (SF) outputs in dielectric/antiferromagnet(AF)/Ag sandwich structures for a fixed input power. Two incident...
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SubjectTerms Antiferromagnetism
Audio frequencies
Dielectrics
Film thickness
Mathematical models
Resonant frequencies
Sandwich structures
Silver
介电
反铁磁
和频
夹层结构
膜厚度
谐振频率
输入功率

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