Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the...

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Published inChinese physics C Vol. 35; no. 7; pp. 635 - 637
Main Author 李海霞 李占奎 王方聪 王柱生 王秀华 李春艳
Format Journal Article
LanguageEnglish
Published 01.07.2011
Subjects
Annealing
Boron
Crystal defects
Detectors
Implantation
Nuclear radiation
Projection
Silicon
两步退火
制备
大尺寸
晶格缺陷
核辐射探测器
硅微条探测器
硼离子注入
退火工艺
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ISSN1674-1137
0254-3052
DOI10.1088/1674-1137/35/7/007

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Summary:The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.
Bibliography:The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.
11-5641/O4
nuclear radiation detector, two-step annealing, reverse body resistance
LI Hai-Xia LI Zhan-Kui WANG Fang-Cong WANG Zhu-Sheng WANG Xiu-Hua LI Chun-Yan（ 1 Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000, China;2 Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China）
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:1674-1137
0254-3052
DOI:10.1088/1674-1137/35/7/007