Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process
The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the...
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| Published in | Chinese physics C Vol. 35; no. 7; pp. 635 - 637 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.07.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1137 0254-3052 |
| DOI | 10.1088/1674-1137/35/7/007 |
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| Abstract | The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved. |
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| AbstractList | The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved. |
| Author | 李海霞 李占奎 王方聪 王柱生 王秀华 李春艳 |
| AuthorAffiliation | Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000, China Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
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| Notes | The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved. 11-5641/O4 nuclear radiation detector, two-step annealing, reverse body resistance LI Hai-Xia LI Zhan-Kui WANG Fang-Cong WANG Zhu-Sheng WANG Xiu-Hua LI Chun-Yan（ 1 Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000, China;2 Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China） ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References | Sands T (8) 2003; 554 Santucci S (2) 2003; 554 Nobili D (4) 2003; 554 O' Sullivan B J (1) 2003; 554 Briantseve T A (3) 2003; 554 Seidel T E (9) 2003; 554 Kim Y (7) 2003; 554 Ajmera A C (10) 2003; 554 Tamura M M (5) 2003; 554 Schreutelkamp R J (6) 2003; 554 |
| References_xml | – volume: 554 start-page: 143 year: 2003 ident: 7 publication-title: J. Electron. Mater. – volume: 554 start-page: 54 issn: 0022-3093 year: 2003 ident: 2 publication-title: J. Non-Crys. Solids – volume: 554 start-page: 251 issn: 0168-583X year: 2003 ident: 9 publication-title: Nucl. Instrum. Methods – volume: 554 start-page: 21 issn: 0169-4332 year: 2003 ident: 3 publication-title: Appl. Surf. Sci. – volume: 554 start-page: 813 year: 2003 ident: 10 publication-title: Appl. Phys. Lett. J. – volume: 554 start-page: 1484 year: 2003 ident: 4 publication-title: J. Appl. Phys. – volume: 554 start-page: 141 issn: 0920-2307 year: 2003 ident: 5 publication-title: Mater. Sci. Rep. – volume: 554 start-page: 3811 year: 2003 ident: 1 publication-title: J. Appl. Phys. – volume: 554 start-page: 275 issn: 0920-2307 year: 2003 ident: 6 publication-title: Mater. Sci. Rep. – volume: 554 start-page: 337 issn: 0168-583X year: 2003 ident: 8 publication-title: Nucl. Instrum. Methods |
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| Snippet | The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and... |
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| SubjectTerms | Annealing Boron Crystal defects Detectors Implantation Nuclear radiation Projection Silicon 两步退火 制备 大尺寸 晶格缺陷 核辐射探测器 硅微条探测器 硼离子注入 退火工艺 |
| Title | Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process |
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