Large scale integrated IGZO crossbar memristor array based artificial neural architecture for scalable in-memory computing

Neuromorphic systems based on memristor arrays have not only addressed the von Neumann bottleneck issue but have also enabled the development of computing applications with high accuracy. In this study, an artificial neural architecture based on a 10 × 10 IGZO memristor array is presented to emulate...

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Published inMaterials today. Nano Vol. 25; p. 100441
Main Authors Naqi, Muhammad, Kim, Taehwan, Cho, Yongin, Pujar, Pavan, Park, Jongsun, Kim, Sunkook
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.2024
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ISSN2588-8420
2588-8420
DOI10.1016/j.mtnano.2023.100441

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Abstract Neuromorphic systems based on memristor arrays have not only addressed the von Neumann bottleneck issue but have also enabled the development of computing applications with high accuracy. In this study, an artificial neural architecture based on a 10 × 10 IGZO memristor array is presented to emulate synaptic dynamics for performing artificial intelligence (AI) computing with high recognition accuracy rate. The large area 10 × 10 IGZO memristor array was fabricated using the photolithography method, resulting in stable and reliable memory operations. The bipolar switching at −2 V–2.5 V, endurance of 500 cycles, retention of >104 s, and uniform Vset/Vreset operation of 100 devices were achieved by modulating the oxygen vacancy in the IGZO film. The emulation of electric synaptic dynamics was also observed, including potentiation-depression, multilevel long-term memory (LTM), and multilevel short-term memory (STM), revealing highly linear and stable synaptic functions at different modulated pulse settings. Additionally, electrical modeling (HSPICE) with vector-matrix measurements and simulation of various artificial neural network (ANN) algorithms, such as convolution neural network (CNN) and spiking neural network (SNN), were performed, demonstrating a linear increase in current accumulation with high recognition rates of 99.33 % and 86.46 %, respectively. This work provides a novel approach for overcoming the von Neumann bottleneck issue and emulating synaptic dynamics in various neural networks with high accuracy.
AbstractList Neuromorphic systems based on memristor arrays have not only addressed the von Neumann bottleneck issue but have also enabled the development of computing applications with high accuracy. In this study, an artificial neural architecture based on a 10 × 10 IGZO memristor array is presented to emulate synaptic dynamics for performing artificial intelligence (AI) computing with high recognition accuracy rate. The large area 10 × 10 IGZO memristor array was fabricated using the photolithography method, resulting in stable and reliable memory operations. The bipolar switching at −2 V–2.5 V, endurance of 500 cycles, retention of >104 s, and uniform Vset/Vreset operation of 100 devices were achieved by modulating the oxygen vacancy in the IGZO film. The emulation of electric synaptic dynamics was also observed, including potentiation-depression, multilevel long-term memory (LTM), and multilevel short-term memory (STM), revealing highly linear and stable synaptic functions at different modulated pulse settings. Additionally, electrical modeling (HSPICE) with vector-matrix measurements and simulation of various artificial neural network (ANN) algorithms, such as convolution neural network (CNN) and spiking neural network (SNN), were performed, demonstrating a linear increase in current accumulation with high recognition rates of 99.33 % and 86.46 %, respectively. This work provides a novel approach for overcoming the von Neumann bottleneck issue and emulating synaptic dynamics in various neural networks with high accuracy.
ArticleNumber 100441
Author Naqi, Muhammad
Pujar, Pavan
Kim, Taehwan
Park, Jongsun
Kim, Sunkook
Cho, Yongin
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Keywords IGZO
Neural networks
Spiking neural network
memristor array
Artificial intelligence
Artificial synapse
neuromorphic computing
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Snippet Neuromorphic systems based on memristor arrays have not only addressed the von Neumann bottleneck issue but have also enabled the development of computing...
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StartPage 100441
SubjectTerms Artificial intelligence
Artificial synapse
IGZO
memristor array
Neural networks
neuromorphic computing
Spiking neural network
Title Large scale integrated IGZO crossbar memristor array based artificial neural architecture for scalable in-memory computing
URI https://dx.doi.org/10.1016/j.mtnano.2023.100441
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