Investigation of ZnO:Al thin films sputtered at different deposition temperatures
ZnO:Al (AZO) thin films were prepared on glass substrates by using RF magnetron sputtering at various deposition temperature, and their properties were investigated. With increasing deposition temperature, the crystallinity was slightly improved, whereas the resistivity continuously deteriorated due...
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| Published in | Journal of the Korean Physical Society Vol. 66; no. 10; pp. 1581 - 1585 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Seoul
The Korean Physical Society
01.05.2015
한국물리학회 |
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| Online Access | Get full text |
| ISSN | 0374-4884 1976-8524 |
| DOI | 10.3938/jkps.66.1581 |
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| Abstract | ZnO:Al (AZO) thin films were prepared on glass substrates by using RF magnetron sputtering at various deposition temperature, and their properties were investigated. With increasing deposition temperature, the crystallinity was slightly improved, whereas the resistivity continuously deteriorated due to a decrease in the mobility and in the carrier concentration. From an X-ray photoelectron spectroscopy (XPS) analysis, the behaviors of the mobility and the carrier concentration were affected by impurity bonding such as oxygen species on the film surface. The mobility decreased due to an increase in the potential height and was the main factor at a low deposition temperature (200 °C). In addition, the carrier concentration decrease due to the trapping of electrons and to the reduction of oxygen vacancy and was dominant factor at a high deposition temperature (400 °C). For the deposition of AZO films, if improved electrical properties are to be obtained, the deposition temperature needs to choose so as to minimize the impurity bonding. |
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| AbstractList | ZnO:Al (AZO) thin films were prepared on glass substrates by using RF magnetron sputtering at various deposition temperature, and their properties were investigated. With increasing deposition temperature, the crystallinity was slightly improved, whereas the resistivity continuously deteriorated due to a decrease in the mobility and in the carrier concentration. From an X-ray photoelectron spectroscopy (XPS) analysis, the behaviors of the mobility and the carrier concentration were affected by impurity bonding such as oxygen species on the film surface. The mobility decreased due to an increase in the potential height and was the main factor at a low deposition temperature (200 °C). In addition, the carrier concentration decrease due to the trapping of electrons and to the reduction of oxygen vacancy and was dominant factor at a high deposition temperature (400 °C). For the deposition of AZO films, if improved electrical properties are to be obtained, the deposition temperature needs to choose so as to minimize the impurity bonding. ZnO:Al (AZO) thin films were prepared on glass substrates by using RF magnetron sputtering at various deposition temperature, and their properties were investigated. With increasing deposition temperature, the crystallinity was slightly improved, whereas the resistivity continuously deteriorated due to a decrease in the mobility and in the carrier concentration. From an X-ray photoelectron spectroscopy (XPS) analysis, the behaviors of the mobility and the carrier concentration were affected by impurity bonding such as oxygen species on the film surface. The mobility decreased due to an increase in the potential height and was the main factor at a low deposition temperature (200 C). In addition, the carrier concentration decrease due to the trapping of electrons and to the reduction of oxygen vacancy and was dominant factor at a high deposition temperature (400 C). For the deposition of AZO films, if improved electrical properties are to be obtained, the deposition temperature needs to choose so as to minimize the impurity bonding. KCI Citation Count: 3 |
| Author | Kim, Deok Kyu Kim, Hong Bae |
| Author_xml | – sequence: 1 givenname: Deok Kyu surname: Kim fullname: Kim, Deok Kyu email: dkkim@cju.ac.kr organization: Advanced Development Team, Samsung Electronics Co. Ltd., Department of Semiconductor Engineering, Cheongju University – sequence: 2 givenname: Hong Bae surname: Kim fullname: Kim, Hong Bae organization: Advanced Development Team, Samsung Electronics Co. Ltd., Department of Semiconductor Engineering, Cheongju University |
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| Cites_doi | 10.1364/OE.19.016244 10.1016/0025-5408(70)90112-1 10.1088/0268-1242/26/5/055003 10.1016/j.apsusc.2012.05.156 10.3938/jkps.66.790 10.1063/1.324149 10.3938/jkps.65.346 10.1063/1.2901024 10.1016/j.jallcom.2010.09.047 10.1016/0368-2048(82)87006-0 10.1116/1.1647595 10.1016/j.jcrysgro.2005.10.040 10.1088/0370-1301/67/10/306 10.1016/j.apsusc.2005.02.137 10.1103/PhysRev.93.632 10.1016/0040-6090(91)90004-H |
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| Keywords | RF magnetron sputtering Impurity bonding ZnO:Al Deposition temperature |
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| Title | Investigation of ZnO:Al thin films sputtered at different deposition temperatures |
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