Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation

Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than...

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Published inPlasma science & technology Vol. 15; no. 8; pp. 791 - 793
Main Author 高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆
Format Journal Article
LanguageEnglish
Published 01.08.2013
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ISSN1009-0630
DOI10.1088/1009-0630/15/8/14

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Abstract Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
AbstractList Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
Author 高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆
AuthorAffiliation Department of Illuminating Engineering and Light Sources,Institute for Electric Light Sources, Fudan University, Shanghai 200433, China
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Notes GAO Huanzhong , HE Long , HE Zhijiang , LI Zebin , WU Zhonghang , CHENG Weihai , AI Qi , FAN Xiaoxuan , OU Qiongrong , LIANG Rongqing Department of Illuminating Engineering and Light Sources, Institute for Electric Light Sources, Fudan University, Shanghai 200433, China
Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
plasma immersion ion implantation; surface treatment; work function; indium tin oxide
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Snippet Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy...
Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was...
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SubjectTerms Conduction
Immersion
Indium tin oxide
Ion implantation
Oxygen content
Oxygen plasma
Work functions
X-ray photoelectron spectroscopy
X-rays
X射线光电子能谱
功能增强
氧化铟锡
等离子体处理
等离子体浸没离子注入
过氧
透明导电膜
铟锡氧化物
Title Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation
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