Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation
Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than...
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Published in | Plasma science & technology Vol. 15; no. 8; pp. 791 - 793 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.08.2013
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Online Access | Get full text |
ISSN | 1009-0630 |
DOI | 10.1088/1009-0630/15/8/14 |
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Abstract | Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV. |
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AbstractList | Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV. Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV. |
Author | 高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆 |
AuthorAffiliation | Department of Illuminating Engineering and Light Sources,Institute for Electric Light Sources, Fudan University, Shanghai 200433, China |
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Cites_doi | 10.1063/1.339055 10.1016/S0040-6090(03)01197-0 10.1063/1.98799 10.1063/1.371859 10.1063/1.1367897 10.1063/1.371901 10.1063/1.118575 10.1063/1.368981 10.1063/1.370948 10.1016/j.orgel.2011.01.015 10.1002/pssa.200406894 10.1063/1.124160 10.1063/1.116313 10.1016/S0921-5107(02)00435-X 10.1063/1.1312847 10.1038/347539a0 10.1063/1.125771 |
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Notes | GAO Huanzhong , HE Long , HE Zhijiang , LI Zebin , WU Zhonghang , CHENG Weihai , AI Qi , FAN Xiaoxuan , OU Qiongrong , LIANG Rongqing Department of Illuminating Engineering and Light Sources, Institute for Electric Light Sources, Fudan University, Shanghai 200433, China Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV. plasma immersion ion implantation; surface treatment; work function; indium tin oxide 34-1187/TL ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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Snippet | Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy... Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was... |
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SubjectTerms | Conduction Immersion Indium tin oxide Ion implantation Oxygen content Oxygen plasma Work functions X-ray photoelectron spectroscopy X-rays X射线光电子能谱 功能增强 氧化铟锡 等离子体处理 等离子体浸没离子注入 过氧 透明导电膜 铟锡氧化物 |
Title | Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation |
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