Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

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Bibliographic Details
Published inJournal of vacuum science and technology. B, Nanotechnology & microelectronics Vol. 29; no. 1; p. 1
Main Authors Fet, A., Häublein, V., Bauer, A. J., Ryssel, H., Frey, L.
Format Journal Article
LanguageEnglish
Published 01.01.2011
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ISSN2166-2746
2166-2754
DOI10.1116/1.3521471

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ISSN:2166-2746
2166-2754
DOI:10.1116/1.3521471