杨富华, 王. 韩. 赵. 张. 吕. 马. (2016). Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor. Chinese physics B, 25(10), 464-468. https://doi.org/10.1088/1674-1056/25/10/108102
Chicago Style (17th ed.) Citation杨富华, 王昊 韩伟华 赵晓松 张望 吕奇峰 马刘红. "Electric-field-dependent Charge Delocalization from Dopant Atoms in Silicon Junctionless Nanowire Transistor." Chinese Physics B 25, no. 10 (2016): 464-468. https://doi.org/10.1088/1674-1056/25/10/108102.
MLA (9th ed.) Citation杨富华, 王昊 韩伟华 赵晓松 张望 吕奇峰 马刘红. "Electric-field-dependent Charge Delocalization from Dopant Atoms in Silicon Junctionless Nanowire Transistor." Chinese Physics B, vol. 25, no. 10, 2016, pp. 464-468, https://doi.org/10.1088/1674-1056/25/10/108102.
Warning: These citations may not always be 100% accurate.