APA (7th ed.) Citation

Fuchsberger, A., Wind, L., Pacheco-Sanchez, A., Aberl, J., Brehm, M., Vogl, L., . . . Weber, W. M. (2025). A Schottky barrier field-effect transistor platform with variable Ge content on SOI. Solid-state electronics, 230, 109221. https://doi.org/10.1016/j.sse.2025.109221

Chicago Style (17th ed.) Citation

Fuchsberger, Andreas, Lukas Wind, Aníbal Pacheco-Sanchez, Johannes Aberl, Moritz Brehm, Lilian Vogl, Peter Schweizer, Masiar Sistani, and Walter M. Weber. "A Schottky Barrier Field-effect Transistor Platform with Variable Ge Content on SOI." Solid-state Electronics 230 (2025): 109221. https://doi.org/10.1016/j.sse.2025.109221.

MLA (9th ed.) Citation

Fuchsberger, Andreas, et al. "A Schottky Barrier Field-effect Transistor Platform with Variable Ge Content on SOI." Solid-state Electronics, vol. 230, 2025, p. 109221, https://doi.org/10.1016/j.sse.2025.109221.