An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers

Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate...

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Published inIEEE transactions on computer-aided design of integrated circuits and systems Vol. 39; no. 10; pp. 2000 - 2005
Main Authors Eslahi, Hossein, Albahrani, Sayed Ali, Mahajan, Dhawal, Khandelwal, Sourabh
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aging
Carrier injection
Computer simulation
conduction angle
Degradation
hot-carrier injection (HCI)
Integrated circuit modeling
Integrated circuit reliability
Mathematical model
Mathematical models
power amplifier (PA)
Power amplifiers
Reliability analysis
reliability model
Stress
Online AccessGet full text
ISSN0278-0070
1937-4151
DOI10.1109/TCAD.2019.2952554

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Abstract Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for "reliability aware design" for PA design is developed and a tradeoff between PA performance and reliability is introduced.
AbstractList Degradation of power amplifier (PA), being a main part of a transceiver chain, affects the overall performance of a transceiver. This article reports, for the first time, an analytical reliability model of the hot-carrier injection (HCI) induced degradation in silicon-based PAs. HCI causes substrate current which is used to develop the proposed model. This model fits very well the simulation results of RelXpert, which is a well-established reliability simulation tool. This model predicts circuit degradation as a function of conduction angle and is valid for the different classes of PAs. With this model, a new approach for “reliability aware design” for PA design is developed and a tradeoff between PA performance and reliability is introduced.
Author Eslahi, Hossein
Khandelwal, Sourabh
Albahrani, Sayed Ali
Mahajan, Dhawal
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SubjectTerms Aging
Carrier injection
Computer simulation
conduction angle
Degradation
hot-carrier injection (HCI)
Integrated circuit modeling
Integrated circuit reliability
Mathematical model
Mathematical models
power amplifier (PA)
Power amplifiers
Reliability analysis
reliability model
Stress
Title An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers
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