Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length - Jieying Luo; Lan Wei; Chi-Shuen Lee; Franklin, A. D.; Ximeng Guan; Pop, E.; Antoniadis, D. A.; Wong, H. P. (IEEE transactions on electron devices, 2013)
Keywords: Applied sciences; Carbon nanotube (CNT); carbon nanotube field effect transistor (CNFET); CNTFETs; contact resistance; Cross-disciplinary physics: materials science; rheology; Data models; direct source-to-drain tunneling; Electronics; Exact sciences and technology; Integrated circuit modeling; Logic gates; Materials science; Molecular electronics, nanoelectronics; Nanoscale materials and structures: fabrication and characterization; Nanotubes; Numerical models; Physics; Semiconductor device modeling; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Tunneling; Parasitic behavior; Performance evaluation; Nanotube devices; carbon nanotube field effect transistor (CNFET); Spurious capacity; Electric stress; Tunnel effect; Carbon nanotubes; Contact resistance; Compact design; Optimization; Nanoelectronics; Field effect transistor; direct source-to-drain tunneling; Virtual reality; Carbon nanotube (CNT); Leakage current; Delay time; Miniaturization; Series resistance; Effective mass; Limiter; Non ideality