APA (7th ed.) Citation

Cappello, T., Roblin, P., & Amin, M. (2025). Efficient High Power Pulsed Radar Amplifiers: Drain Versus Gate Modulations in GaN Technology. IEEE microwave and wireless technology letters (Print), 35(6), 746-749. https://doi.org/10.1109/LMWT.2025.3549676

Chicago Style (17th ed.) Citation

Cappello, Tommaso, Patrick Roblin, and Moeness Amin. "Efficient High Power Pulsed Radar Amplifiers: Drain Versus Gate Modulations in GaN Technology." IEEE Microwave and Wireless Technology Letters (Print) 35, no. 6 (2025): 746-749. https://doi.org/10.1109/LMWT.2025.3549676.

MLA (9th ed.) Citation

Cappello, Tommaso, et al. "Efficient High Power Pulsed Radar Amplifiers: Drain Versus Gate Modulations in GaN Technology." IEEE Microwave and Wireless Technology Letters (Print), vol. 35, no. 6, 2025, pp. 746-749, https://doi.org/10.1109/LMWT.2025.3549676.