APA (7th ed.) Citation

Bezhenova, V., & Michalowska-Forsyth, A. (2018). Aspect ratio of radiation-hardened MOS transistors: Modelling of the equivalent channel dimensions of integrated MOS transistors in radiation-hardened enclosed layout. Elektrotechnik und Informationstechnik, 135(1), 61-68. https://doi.org/10.1007/s00502-017-0575-2

Chicago Style (17th ed.) Citation

Bezhenova, Varvara, and Alicja Michalowska-Forsyth. "Aspect Ratio of Radiation-hardened MOS Transistors: Modelling of the Equivalent Channel Dimensions Of integrated MOS Transistors in Radiation-hardened Enclosed Layout." Elektrotechnik Und Informationstechnik 135, no. 1 (2018): 61-68. https://doi.org/10.1007/s00502-017-0575-2.

MLA (9th ed.) Citation

Bezhenova, Varvara, and Alicja Michalowska-Forsyth. "Aspect Ratio of Radiation-hardened MOS Transistors: Modelling of the Equivalent Channel Dimensions Of integrated MOS Transistors in Radiation-hardened Enclosed Layout." Elektrotechnik Und Informationstechnik, vol. 135, no. 1, 2018, pp. 61-68, https://doi.org/10.1007/s00502-017-0575-2.