Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes
The application of an electric field to a semiconductor can alter its absorption properties. This electroabsorption effect can have a significant impact on the quantum efficiency of detector structures. The photocurrents in bulk InGaAs and GaAsSb p-i-n photodiodes with intrinsic absorber layer thick...
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| Published in | Applied physics letters Vol. 125; no. 22 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
25.11.2024
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| Online Access | Get full text |
| ISSN | 0003-6951 1520-8842 1077-3118 1077-3118 |
| DOI | 10.1063/5.0228938 |
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| Abstract | The application of an electric field to a semiconductor can alter its absorption properties. This electroabsorption effect can have a significant impact on the quantum efficiency of detector structures. The photocurrents in bulk InGaAs and GaAsSb p-i-n photodiodes with intrinsic absorber layer thicknesses ranging from 1 to 4.8 μm have been investigated. By using phase-sensitive photocurrent measurements as a function of wavelength, the absorption coefficients as low as 1 cm−1 were extracted for electric fields up to 200 kV/cm. Our findings show that while the absorption coefficients reduce between 1500 and 1650 nm for both materials when subject to an increasing electric field, an absorption coefficient of 100 cm−1 can be obtained at a wavelength of 2 μm, well beyond the bandgap energy when they are subject to a high electric field. The results are shown to be in good agreement with theoretical models that use Airy functions to solve the absorption coefficients in a uniform electric field. |
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| AbstractList | The application of an electric field to a semiconductor can alter its absorption properties. This electroabsorption effect can have a significant impact on the quantum efficiency of detector structures. The photocurrents in bulk InGaAs and GaAsSb p-i-n photodiodes with intrinsic absorber layer thicknesses ranging from 1 to 4.8 μm have been investigated. By using phase-sensitive photocurrent measurements as a function of wavelength, the absorption coefficients as low as 1 cm−1 were extracted for electric fields up to 200 kV/cm. Our findings show that while the absorption coefficients reduce between 1500 and 1650 nm for both materials when subject to an increasing electric field, an absorption coefficient of 100 cm−1 can be obtained at a wavelength of 2 μm, well beyond the bandgap energy when they are subject to a high electric field. The results are shown to be in good agreement with theoretical models that use Airy functions to solve the absorption coefficients in a uniform electric field. |
| Author | Ng, J. S. Jin, X. Liu, Y. Jung, H. Krishna, S. Lee, S. David, J. P. R. Harun, F. |
| Author_xml | – sequence: 1 givenname: Y. surname: Liu fullname: Liu, Y. organization: Department of Electronic and Electrical Engineering, University of Sheffield – sequence: 2 givenname: X. surname: Jin fullname: Jin, X. organization: Department of Electronic and Electrical Engineering, University of Sheffield – sequence: 3 givenname: H. surname: Jung fullname: Jung, H. organization: 4Electronics Technology Section, Universiti Kuala Lumpur British Malaysian Institute, Gombak, Selangor Darul Ehsan 53100, Malaysia – sequence: 4 givenname: S. surname: Lee fullname: Lee, S. organization: 4Electronics Technology Section, Universiti Kuala Lumpur British Malaysian Institute, Gombak, Selangor Darul Ehsan 53100, Malaysia – sequence: 5 givenname: F. surname: Harun fullname: Harun, F. organization: Electronics Technology Section, Universiti Kuala Lumpur British Malaysian Institute – sequence: 6 givenname: J. S. surname: Ng fullname: Ng, J. S. organization: Department of Electronic and Electrical Engineering, University of Sheffield – sequence: 7 givenname: S. surname: Krishna fullname: Krishna, S. organization: Department of Electrical and Computer Engineering, The Ohio State University – sequence: 8 givenname: J. P. R. surname: David fullname: David, J. P. R. organization: Department of Electronic and Electrical Engineering, University of Sheffield |
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| Title | Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes |
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