High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region

The effect of Be doping on the quantum efficiency and the dark current of InAs/GaSb long-wavelength infrared superlattice photodetectors grown by molecular-beam epitaxy on GaSb substrates are reported. A significant improvement of quantum efficiency （QE） with p-type doping is demonstrated. Our resul...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 10; pp. 149 - 152
Main Author 周易 陈建新 徐志成 王芳芳 徐庆庆 许佳佳 白治中 靳川 何力
Format Journal Article
LanguageEnglish
Published 01.10.2014
Subjects
GaSb
p型掺杂
光电探测器
减震器
性能
超晶格
量子效率
长波长
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/31/10/108503

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Summary:The effect of Be doping on the quantum efficiency and the dark current of InAs/GaSb long-wavelength infrared superlattice photodetectors grown by molecular-beam epitaxy on GaSb substrates are reported. A significant improvement of quantum efficiency （QE） with p-type doping is demonstrated. Our results show that Be doping level at 2.5 × 10^15 cm^3 gives the highest quantum efficiency of product 28%. We also demonstrate that the increased QE is not only resulted from the longer minority carrier diffusion length, but also the p-n junction location change. Finally, the result also shows that the sample with a doping density of 2,5 × 10^15 cm^3 has the largest D＊ as 8.68 × 10^10 cm.Hz^l/2.W^-1, which is almost five times D＊ of the non-intentionally doped one.
Bibliography:ZHOU Yi, CHEN Jian-Xin, XU Zhi-Cheng, WANG Fang-Fang, XU Qing-Qing, XU Jia-Jia, BAI Zhi-Zhong, JIN Chuan, HE Li（ Key Laboratory of Infrared Imaging Material and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083）
11-1959/O4
The effect of Be doping on the quantum efficiency and the dark current of InAs/GaSb long-wavelength infrared superlattice photodetectors grown by molecular-beam epitaxy on GaSb substrates are reported. A significant improvement of quantum efficiency （QE） with p-type doping is demonstrated. Our results show that Be doping level at 2.5 × 10^15 cm^3 gives the highest quantum efficiency of product 28%. We also demonstrate that the increased QE is not only resulted from the longer minority carrier diffusion length, but also the p-n junction location change. Finally, the result also shows that the sample with a doping density of 2,5 × 10^15 cm^3 has the largest D＊ as 8.68 × 10^10 cm.Hz^l/2.W^-1, which is almost five times D＊ of the non-intentionally doped one.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/10/108503