Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^...
Saved in:
| Published in | Chinese physics B Vol. 26; no. 11; pp. 264 - 268 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2017
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/26/11/114212 |
Cover
| Abstract | Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage. |
|---|---|
| AbstractList | Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage. |
| Author | 马林东;李豫东;郭旗;文林;周东;冯婕;刘元;曾骏哲;张翔;王田珲 |
| AuthorAffiliation | Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics ＆ Chemistry, Urumqi 830011, China;Xinjiang Key Laboratory of Electronic Information Material and Device, Ummqi 830011, China;University of Chinese Academy of Sciences, Beijing 100190, China |
| Author_xml | – sequence: 1 fullname: 马林东;李豫东;郭旗;文林;周东;冯婕;刘元;曾骏哲;张翔;王田珲 |
| BookMark | eNqFkN1KAzEQhYNUsK2-ggTv106STZoFb0rxDyq9sPdhNputkTVbk0Xsc_kePpNbW3rhjTBwYDjfMOeMyCC0wRFyyeCagdYTpqZ5xkCqCVcTxvrJOeMnZMhB6kxokQ_I8Gg6I6OUXgEUAy6GZDEL2GyTT7St6Sa2XRsohop-f2URtzRi5bHz_dLVtbNdbwt0_rR8pmg7_-Hoxn-6hiYXUhvTOTmtsUnu4qBjsrq7Xc0fssXy_nE-W2SWa95l0inlZInCae0KW5UCihILKGvE3FVYqJIzUSjtatRCSwl5WVRWIoAEq8WY3OzP2timFF1trO9-v-wi-sYwMLtizC6z2WU2XBnGzL6YHld_8E30bxi3_4NXB_ClDet3H9ZHUk2FzCUHIX4AC3p1Ug |
| CitedBy_id | crossref_primary_10_1117_1_JATIS_10_3_036003 crossref_primary_10_1117_1_JATIS_9_4_046003 crossref_primary_10_1117_1_JATIS_10_2_026001 crossref_primary_10_1016_j_radphyschem_2021_109384 crossref_primary_10_1016_j_sse_2018_11_007 crossref_primary_10_1088_1742_6596_1802_3_032083 crossref_primary_10_3390_electronics12122667 |
| Cites_doi | 10.1109/23.211391 10.1142/S0129156404002442 10.1109/TNS.2012.2203317 10.1109/TNS.2014.2302038 10.1109/TED.2009.2030623 10.1063/1.4913373 10.1109/23.490905 10.1109/TNS.2002.1039695 10.1109/TNS.2013.2261316 10.1063/1.4896409 10.1109/TNS.2012.2222927 10.1109/TNS.2008.2001040 10.1063/1.4889878 10.1109/TED.2002.807251 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION |
| DOI | 10.1088/1674-1056/26/11/114212 |
| DatabaseName | 维普_期刊 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库- 镜像站点 CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors |
| EISSN | 2058-3834 |
| EndPage | 268 |
| ExternalDocumentID | 10_1088_1674_1056_26_11_114212 673545203 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K |
| ID | FETCH-LOGICAL-c282t-5e66e5ba3e88e9cdb309ba90bfaa4eda96b213968efa8385504b9dc5a0050c83 |
| ISSN | 1674-1056 |
| IngestDate | Thu Apr 24 23:12:31 EDT 2025 Tue Jul 01 02:55:23 EDT 2025 Wed Feb 14 09:56:56 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 11 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c282t-5e66e5ba3e88e9cdb309ba90bfaa4eda96b213968efa8385504b9dc5a0050c83 |
| Notes | Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage. complementary metal-oxide-semiconductor（CMOS） active pixel sensor dark current fixedpattern noise quantum efficiency Lindong Ma1,2,3, Yudong Li1,2, Qi Guo1,2, Lin Wen1,2, Dong Zhou1,2, Jie Feng1,2, Yuan Liu1,2,3, Junzhe Zeng1,2,3, Xiang Zhang1,2,3, Tianhui Wang1,2,3（ 1 Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences Xinjiang Technical Institute of Physics ＆ Chemistry, Urumqi 830011, China ; 2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China ; 3 University of Chinese Academy of Sciences, Beijing 100190, China） 11-5639/O4 |
| PageCount | 5 |
| ParticipantIDs | crossref_citationtrail_10_1088_1674_1056_26_11_114212 crossref_primary_10_1088_1674_1056_26_11_114212 chongqing_primary_673545203 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2017-11-01 |
| PublicationDateYYYYMMDD | 2017-11-01 |
| PublicationDate_xml | – month: 11 year: 2017 text: 2017-11-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2017 |
| References | 11 12 Chen P X (16) 2005 23 13 WANG X Y (18) 2008 14 17 Jan B (8) 2000; 3965 19 Cao C (24) 2014; 23 Jin J (22) 2016; 25 Padmakumar R R (1) 2009 2 Cedric V (10) 2010; 57 3 4 5 6 Wang F (15) 2016; 65 7 Vincent G (9) 2003; 50 20 21 |
| References_xml | – ident: 20 doi: 10.1109/23.211391 – volume: 57 start-page: 6 issn: 0018-9499 year: 2010 ident: 10 publication-title: IEEE Trans. Nucl. Sci. – start-page: 95 year: 2005 ident: 16 publication-title: Radiation Effects on Semiconductor Devices and Integrated Circuits – year: 2009 ident: 1 – volume: 65 issn: 0372-736X year: 2016 ident: 15 publication-title: Acta Phys. Sin. – ident: 17 doi: 10.1142/S0129156404002442 – ident: 11 doi: 10.1109/TNS.2012.2203317 – ident: 19 doi: 10.1109/TNS.2014.2302038 – ident: 12 – ident: 13 doi: 10.1109/TED.2009.2030623 – ident: 3 doi: 10.1063/1.4913373 – volume: 23 issn: 1674-1056 year: 2014 ident: 24 publication-title: Chin. Phys. – ident: 23 doi: 10.1109/23.490905 – volume: 25 issn: 1674-1056 year: 2016 ident: 22 publication-title: Chin. Phys. – ident: 6 doi: 10.1109/TNS.2002.1039695 – ident: 21 doi: 10.1109/TNS.2013.2261316 – ident: 5 doi: 10.1063/1.4896409 – ident: 14 doi: 10.1109/TNS.2012.2222927 – year: 2008 ident: 18 – ident: 2 doi: 10.1109/TNS.2008.2001040 – ident: 4 doi: 10.1063/1.4889878 – volume: 50 start-page: 11 issn: 0018-9499 year: 2003 ident: 9 publication-title: IEEE Trans. Nucl. Sci. – ident: 7 doi: 10.1109/TED.2002.807251 – volume: 3965 start-page: 2000 year: 2000 ident: 8 publication-title: Proc. SPIE |
| SSID | ssj0061023 |
| Score | 2.1406143 |
| Snippet | Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are... |
| SourceID | crossref chongqing |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 264 |
| SubjectTerms | cmos γ射线 互补金属氧化物半导体 有源像素传感器 质子辐照 辐射效应 非均匀性 |
| Title | Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors |
| URI | http://lib.cqvip.com/qk/85823A/201711/673545203.html |
| Volume | 26 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnR1db9QwLBpDSLwgPsUxQH3AT6dy1zRJk8f21tOEGENiSHur2lwKSNPduN0Q8Lf4H_wm7DTtbgJNgHSqIjd23NhXO67jMPaikUJMWyfirF24WLgsiWtjXezsonVOtgvtz085fKMO3otXJ_Jk54bYylq62DQv7fc_7iv5H6kiDOVKu2T_QbIDUQRgG-WLV5QwXv9KxtsVRajgQsgshlkJRRqv62_jNZUe8CIeEjeW49nh0TtfROOLG599-upOx-e4mF2F7zrBU4VSQKEh34dSgimgwEYG2kBuqGGmoFUB5RyKGZgcSg0aOyVQKjAKdBZ66yFVFkqPm898lxJMFoYwM0gLD9wHXRIlJJMXV-8ipdQzowgRfwGlG6onSEDkFtH1VXSJ3EI-pwbyYGQPxA7aNyTRDzTxOUrPbQ7ao5gUCh5Q8HHzKT1cMQcjPDAjtrVvIKTwdxGx4NshFTTTyRBS6ayAygTaJxlqdHsYn0odp33kNZiObrN__xdJtg1BV5s9-BS8OzroN3OFr3iKnPTD0e4cH0pJ_IU-1l-a6SF5UmUpHQxPJW5v8gw9Rtq2evS29z8UFeOgMENPtd8Xr_VkgE24miTJpBuDyop8XC0_fEZnacs92_Kzju-yO2GBFOWdtt9jO255n93yicr2_AF73et8tGqjTucj1Pno5w_S92jQ9yjoe4RN0veo0_fI63sU9P0hO56Xx7ODOJwIEluu-SaWTiknmzp1WjtjF006NU1tpk1b18ItaqMajksapV1b65Rq9YnGLKysqcyR1ekjtrtcLd1jFllrBdo3S-UXBWLpxHFHYVDD2zrjfMT2hjmpzrrCL9Uw8yMm-1mqbKilT0e6nFY-p0Prima6opmuuMJVdtXN9IhNBrye6PUYT67lY4_dvtTfp2x3s75wz9BJ3jTPvU78Avb-iv0 |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Analysis+of+proton+and+%CE%B3-ray+radiation+effects+on+CMOS+active+pixel+sensors&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E9%A9%AC%E6%9E%97%E4%B8%9C%3B%E6%9D%8E%E8%B1%AB%E4%B8%9C%3B%E9%83%AD%E6%97%97%3B%E6%96%87%E6%9E%97%3B%E5%91%A8%E4%B8%9C%3B%E5%86%AF%E5%A9%95%3B%E5%88%98%E5%85%83%3B%E6%9B%BE%E9%AA%8F%E5%93%B2%3B%E5%BC%A0%E7%BF%94%3B%E7%8E%8B%E7%94%B0%E7%8F%B2&rft.date=2017-11-01&rft.issn=1674-1056&rft.eissn=2058-3834&rft.volume=26&rft.issue=11&rft.spage=264&rft.epage=268&rft_id=info:doi/10.1088%2F1674-1056%2F26%2F11%2F114212&rft.externalDocID=673545203 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |