The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes
The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenke...
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| Published in | Chinese physics letters Vol. 33; no. 11; pp. 92 - 95 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2016
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| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/33/11/117301 |
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| Summary: | The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs. |
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| Bibliography: | The transport mechanisms of the reverse leakage current in the UV light-emitting diodes （380nm） are investi- gated by the temperature-dependent current-voltage measurement first. Three possible transport mechanisms, the space-limited-charge conduction, the variable-range hopping and the Poole-Frenkel emission, are proposed to explain the transport process of the reverse leakage current above 295 K, respectively. With the in-depth investigation, the former two transport mechanisms are excluded. It is found that the experimental data agree well with the Poole Frenkel emission model. Furthermore, the activation energies of the traps that cause the reverse leakage current are extracted, which are 0.05eV, 0.09eV, and 0.11 eV, respectively. This indicates that at least three types of trap states are located below the bottom of the conduction band in the depletion region of the UV LEDs. 11-1959/O4 Feng Dai1,2, Xue-Feng Zheng1, Pei-Xian Li1, Xiao-Hui Hou3, Ying-Zhe Wang1, Yan-Rong Cao1,2, Xiao-Hua Ma1, Yue Hao1（1Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071;2School of Mechano-electronic Engineering, Xidian University, Xi＇an 710071;3School of Computer Science and Technology, Xidian University, Xi＇an 710071） |
| ISSN: | 0256-307X 1741-3540 |
| DOI: | 10.1088/0256-307X/33/11/117301 |