Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions
Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with inc...
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| Published in | Chinese physics B Vol. 25; no. 11; pp. 588 - 593 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.11.2016
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| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/25/11/118104 |
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| Abstract | Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy（XPS） spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×105 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond. |
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| AbstractList | Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy（XPS） spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×105 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond. |
| Author | 张贺 李尚升 宿太超 胡美华 李光辉 马红安 贾晓鹏 |
| AuthorAffiliation | School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China |
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| CitedBy_id | crossref_primary_10_7498_aps_68_20181855 crossref_primary_10_1016_j_jcrysgro_2023_127302 crossref_primary_10_1016_j_ijrmhm_2017_03_003 crossref_primary_10_1039_C9CE01257E crossref_primary_10_1016_j_ijrmhm_2019_02_011 crossref_primary_10_7498_aps_67_20180356 crossref_primary_10_1016_j_mtcomm_2020_101021 crossref_primary_10_1016_j_diamond_2023_109746 crossref_primary_10_7498_aps_67_20180207 crossref_primary_10_7498_aps_69_20200692 |
| Cites_doi | 10.1023/A:1004788930114 10.1002/pssb.v245:9 10.1073/pnas.1313340110 10.1016/S0925-9635(99)00042-4 10.1039/B814406K 10.1143/JJAP.38.L1519 10.1103/RevModPhys.83.543 10.1103/PhysRevB.60.R2139 10.1088/1674-1056/18/6/009 10.7498/aps.64.198103 10.7498/aps.64.228101 10.1021/cg2003468 10.1039/c3ce42385a 10.1039/c1cp20453j 10.1063/1.1491600 10.7498/aps.64.128101 10.1016/j.epsl.2006.06.049 10.1016/j.ijrmhm.2015.08.009 10.1021/j100681a014 10.1016/j.diamond.2003.08.028 10.1103/PhysRevLett.92.017402 10.1016/j.ijrmhm.2013.01.009 10.1016/S0925-9635(01)00576-3 10.1016/S0022-0248(96)00797-X 10.1088/1009-0630/16/3/15 10.1016/j.ijrmhm.2012.03.005 10.1039/c4cc01939c 10.1016/S0925-9635(00)00218-1 10.1088/0268-1242/20/2/R01 10.1016/j.jcrysgro.2013.05.002 10.1016/j.diamond.2006.06.005 |
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| Notes | Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy（XPS） spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×105 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond. 11-5639/O4 diamond additive photoelectron sulfur doping morphol graphite incorporated attributed inclusion |
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