Direct characterization of boron segregation at random and twin grain boundaries

Boron distribution at grain boundaries in hot-deformed nickel is directly characterized by the time-of-flight secondary ion mass spectrometry. The segregations of boron are observed at both the random and twin grain boundaries. Two types of segregations at random grain boundaries are observed. The f...

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Published inChinese physics B Vol. 26; no. 8; pp. 366 - 369
Main Author 李向龙 吴平 杨锐杰 张师平 陈森 王学敏 淮秀兰
Format Journal Article
LanguageEnglish
Published 01.08.2017
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/8/086802

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Summary:Boron distribution at grain boundaries in hot-deformed nickel is directly characterized by the time-of-flight secondary ion mass spectrometry. The segregations of boron are observed at both the random and twin grain boundaries. Two types of segregations at random grain boundaries are observed. The first type of segregation has a high intensity and small width. Its formation is attributed to the incorporating of dislocations into the moving grain boundaries. The second type of segregation arises from the cooling induced segregation at the dislocations associated with the grain boundaries. The segregation at twin boundary is similar to the second type of segregation at random grain boundaries.
Bibliography:boron segregation, recrystallization, twin boundary, SIMS
Boron distribution at grain boundaries in hot-deformed nickel is directly characterized by the time-of-flight secondary ion mass spectrometry. The segregations of boron are observed at both the random and twin grain boundaries. Two types of segregations at random grain boundaries are observed. The first type of segregation has a high intensity and small width. Its formation is attributed to the incorporating of dislocations into the moving grain boundaries. The second type of segregation arises from the cooling induced segregation at the dislocations associated with the grain boundaries. The segregation at twin boundary is similar to the second type of segregation at random grain boundaries.
11-5639/O4
Xiang-Long Li1, Ping Wu1,Rui-Jie Yang1, Shi-Ping Zhang1, Sen Chen1, Xue-Min Wang2, and Xiu-Lan Huai3 (1 Belting Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics University of Science & Technology Beifing, Beijing 100083, China 2School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 3 Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, China)
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/8/086802