2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography
We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coup...
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| Published in | Chinese physics B Vol. 25; no. 2; pp. 181 - 185 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.02.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/25/2/024204 |
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| Abstract | We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature. |
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| AbstractList | We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature. |
| Author | 杨成奥 张宇 廖永平 邢军亮 魏思航 张立春 徐应强 倪海桥 牛智川 |
| AuthorAffiliation | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China |
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| Cites_doi | 10.1016/j.physe.2005.08.003 10.1063/1.3678187 10.1109/JQE.1987.1073454 10.1364/OE.14.011442 10.1109/LPT.2009.2029244 10.1063/1.3399779 10.1109/LPT.2003.821239 10.1143/JJAP.35.4654 10.1049/el.2013.1520 10.1016/j.saa.2004.11.029 10.1049/el.2014.2733 10.1117/12.871411 10.1117/12.2050478 10.1049/el.2010.1533 10.1109/LPT.2010.2049989 10.1109/LPT.2005.848398 10.1117/12.2074141 10.1109/68.68030 10.1117/12.2039734 10.1063/1.4808265 10.1049/el.2010.2733 10.1117/12.2036528 10.1364/AO.45.004957 |
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| Notes | We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature. laterally coupled distributed feedback laser, LC-DFB, interference lithography, GaSb, second-order Bragg grating Cheng-Ao Yang Yu Zhang, Yong-Ping Liao, Jun-Liang Xing, Si-Hang Wei, Li-Chun Zhang, Ying-Qiang Xu2, Hai-Qiao Ni, and Zhi-Chuan Niull 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China 11-5639/O4 |
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| References | 22 23 25 Xing J L (4) 2014; 31 Choi W Y (24) 1996; 35 10 11 12 13 14 15 17 18 19 1 2 3 5 6 7 8 9 Chen N (16) 1997 20 21 |
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| SubjectTerms | DFB激光器 GaSb 侧向耦合 光栅操作 分布反馈 单纵模 干涉光刻 生长过程 |
| Title | 2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography |
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