A High Performance Terahertz Waveguide Detector Based on a Low-Barrier Diode
A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The mea...
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| Published in | Chinese physics letters Vol. 33; no. 6; pp. 6 - 8 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2016
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/33/6/060701 |
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| Abstract | A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 50-560 OHz and is about 400 V/W at 560 600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, moleeuIar spectroscopy and atmospheric remote sensing. |
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| AbstractList | A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 50-560 OHz and is about 400 V/W at 560 600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, moleeuIar spectroscopy and atmospheric remote sensing. |
| Author | 任田昊 张勇 延波 徐锐敏 杨成樾 周静涛 金智 |
| AuthorAffiliation | Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 |
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| Cites_doi | 10.1109/JPROC.2004.833670 10.1016/j.crhy.2010.05.002 10.1109/LED.2010.2048192 10.1109/TTHZ.2011.2159561 10.1103/PhysRevE.65.051903 10.1109/LMWC.2010.2055553 |
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| Notes | Tian-Hao Ren, Yong Zhang, Bo Yan, Rui-Min Xu, Cheng-Yue Yang, 3ing-Tao Zhou, Zhi Jin （1 Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731） 11-1959/O4 A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By using the InGaAs/InP material system, the feature of the low barrier is obtained which greatly improves the performance of the detector. The measured typical voltage responsivity is about 900 V/W at 50-560 OHz and is about 400 V/W at 560 600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, moleeuIar spectroscopy and atmospheric remote sensing. |
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| References | 1 2 4 Tu X C (3) 2013; 22 5 6 Zhang J J (9) 2015; 34 Hesler J L (7) 2007 Yao C F (8) 2013; 41 10 |
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| Snippet | A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated. By... |
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| SubjectTerms | Barrier InGaAs／InP Low 太赫兹 性能 探测器 波导 肖特基二极管 |
| Title | A High Performance Terahertz Waveguide Detector Based on a Low-Barrier Diode |
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