High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer - 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜 (Journal of semiconductors, 2016)
Keywords: AlGaN/GaN; HEMT; MOS器件; 增强型; 性能; 栅介质; 氟化; 阻挡层