陈堂胜, 高. 徐. 张. 孔. 周. 孔. 郁. 董. (2016). High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer. Journal of semiconductors, 37(6), 112-115. https://doi.org/10.1088/1674-4926/37/6/064013
Chicago Style (17th ed.) Citation陈堂胜, 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅. "High-performance Enhancement-mode AlGaN/GaN MOS-HEMTs with Fluorinated Stack Gate Dielectrics and Thin Barrier Layer." Journal of Semiconductors 37, no. 6 (2016): 112-115. https://doi.org/10.1088/1674-4926/37/6/064013.
MLA (9th ed.) Citation陈堂胜, 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅. "High-performance Enhancement-mode AlGaN/GaN MOS-HEMTs with Fluorinated Stack Gate Dielectrics and Thin Barrier Layer." Journal of Semiconductors, vol. 37, no. 6, 2016, pp. 112-115, https://doi.org/10.1088/1674-4926/37/6/064013.