Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide

Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passi...

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Published inChinese physics B Vol. 26; no. 9; pp. 478 - 482
Main Author 侯彩霞 郑新和 贾锐 陶科 刘三姐 姜帅 张鹏飞 孙恒超 李永涛
Format Journal Article
LanguageEnglish
Published 01.08.2017
Subjects
Al2O3薄膜
SiNx
单晶硅表面
原子层沉积
少数载流子寿命
晶体硅
氧化铝
表面钝化
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/9/098103

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Abstract Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.
AbstractList Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.
Author 侯彩霞 郑新和 贾锐 陶科 刘三姐 姜帅 张鹏飞 孙恒超 李永涛
AuthorAffiliation Depallment of Physics, University of Science and Technology Beijing, Beijing 100083, China Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Author_xml – sequence: 1
  fullname: 侯彩霞 郑新和 贾锐 陶科 刘三姐 姜帅 张鹏飞 孙恒超 李永涛
BookMark eNqFkF1LwzAUhoNMcJv-BKF4X3uapG2CVzL8goE3eh3SNN0iaTqTbNh_b6tjF954deDlfc7hPAs0c73TCF3ncJsDY1leVjTNoSgzXGY8A85yIGdojqFgKWGEztD81LlAixA-AMocMJkjvfJDiNJa43QSjDWqd0nY-1YqnexkCOYgoxkz4w46RLORUTdJPSRxq30nbSJj3xmVWjlonzZ61wczNaTdd8btu6T_Mo2-ROettEFfHecSvT8-vK2e0_Xr08vqfp0qzCCmRQ20UAQ3WnFNGVaUYFpXBccN4azlrGQ1bgE3ZVURyimmUrJ6DFtQwBtClqj43at8H4LXrdh500k_iBzE5EpMHsTkQeBScPHrauTu_nDKxJ-_o5fG_kvfHOlt7zafxm1OZ8uKABnJgnwDCSp-oA
CitedBy_id crossref_primary_10_1088_1674_1056_ac34fe
crossref_primary_10_1007_s10854_019_02808_6
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ContentType Journal Article
DBID 2RA
92L
CQIGP
~WA
AAYXX
CITATION
DOI 10.1088/1674-1056/26/9/098103
DatabaseName 维普_期刊
中文科技期刊数据库-CALIS站点
维普中文期刊数据库
中文科技期刊数据库- 镜像站点
CrossRef
DatabaseTitle CrossRef
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Physics
DocumentTitleAlternate Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide
EISSN 2058-3834
EndPage 482
ExternalDocumentID 10_1088_1674_1056_26_9_098103
673030885
GroupedDBID 02O
1JI
1WK
29B
2RA
4.4
5B3
5GY
5VR
5VS
5ZH
6J9
7.M
7.Q
92L
AAGCD
AAJIO
AAJKP
AALHV
AATNI
ABHWH
ABJNI
ABQJV
ACAFW
ACGFS
ACHIP
AEFHF
AENEX
AFUIB
AFYNE
AHSEE
AKPSB
ALMA_UNASSIGNED_HOLDINGS
ASPBG
ATQHT
AVWKF
AZFZN
BBWZM
CCEZO
CCVFK
CEBXE
CHBEP
CJUJL
CQIGP
CRLBU
CS3
DU5
EBS
EDWGO
EJD
EMSAF
EPQRW
EQZZN
FA0
FEDTE
HAK
HVGLF
IJHAN
IOP
IZVLO
JCGBZ
KNG
KOT
M45
N5L
NT-
NT.
PJBAE
Q02
RIN
RNS
ROL
RPA
RW3
SY9
TCJ
TGP
UCJ
W28
~WA
-SA
-S~
AAYXX
ACARI
ADEQX
AEINN
AERVB
AGQPQ
AOAED
ARNYC
CAJEA
CITATION
Q--
U1G
U5K
ID FETCH-LOGICAL-c280t-5b045c32dec9e482c4324b7592d398f9868b2f02d677349424aa8b68bf0c09d33
ISSN 1674-1056
IngestDate Thu Apr 24 23:00:28 EDT 2025
Wed Oct 01 03:35:07 EDT 2025
Wed Feb 14 09:57:14 EST 2024
IsPeerReviewed true
IsScholarly true
Issue 9
Language English
License http://iopscience.iop.org/info/page/text-and-data-mining
http://iopscience.iop.org/page/copyright
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c280t-5b045c32dec9e482c4324b7592d398f9868b2f02d677349424aa8b68bf0c09d33
Notes atomic layer deposition Al_2O_3 surface passivation effective minority carrier lifetime
Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.
11-5639/O4
PageCount 5
ParticipantIDs crossref_primary_10_1088_1674_1056_26_9_098103
crossref_citationtrail_10_1088_1674_1056_26_9_098103
chongqing_primary_673030885
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2017-08-01
PublicationDateYYYYMMDD 2017-08-01
PublicationDate_xml – month: 08
  year: 2017
  text: 2017-08-01
  day: 01
PublicationDecade 2010
PublicationTitle Chinese physics B
PublicationTitleAlternate Chinese Physics
PublicationYear 2017
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SSID ssj0061023
Score 2.10974
Snippet Atomic-layer-deposited（ALD） aluminum oxide（Al2O3） has demonstrated an excellent surface passivation for crystalline silicon（c-Si） surfaces, as well as...
SourceID crossref
chongqing
SourceType Enrichment Source
Index Database
Publisher
StartPage 478
SubjectTerms Al2O3薄膜
SiNx
单晶硅表面
原子层沉积
少数载流子寿命
晶体硅
氧化铝
表面钝化
Title Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide
URI http://lib.cqvip.com/qk/85823A/201709/673030885.html
Volume 26
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVIOP
  databaseName: IOP Science Platform
  customDbUrl:
  eissn: 2058-3834
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0061023
  issn: 1674-1056
  databaseCode: IOP
  dateStart: 20080101
  isFulltext: true
  titleUrlDefault: https://iopscience.iop.org/
  providerName: IOP Publishing
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1ba9swFBZbx2AvY1eWdRt62FtQk8iyLD2OspEVtpXRQtiLsWR5Mbh2lwus_fU9ujnuVsq6FxFEdAI-X44-yed8B6H3ZaVSbYQk4PuKsExnRBYzRVQyM1kJlIM72cUvX_n8lB0t0sUudchVl2zUgb68sa7kf7wKc-BXWyV7B8_2RmECPoN_YQQPw_hPPj5cXQC5axxTXNcNOLUdr7erqoA_6zmw4tC5bFz3YhqBby5tPG7GcOA-qzVpCuDdpDQugQu-UUDAqm2GfPe7Lq9rGSxdx8pwH7LetWyed1ufPlKTRd1H-h9L40PJom7JvIfQkU_Q_b6td_cGnS8SGl5CwMYWU-Bi3OQZg4juNcJjYPWl8AFAchAlpZg5YYO_4zfEPHuVEK3ZchU7SPeOKa66rpr9x27W5xi6t-tC5NZYbo3llOcy92buowc049y2vPj87Thu3dzqWNgTevz9WPIlxKSfm1A-kRNvxgpyLLv25y-gGQNiM2AoJ0_Q43C0wB88Tp6ie6Z9hh4ee1c9R2aAFhzQggNa8AAteIgWrC5wQAu-GS04ogU7tLxAp58-nhzOSWiyQTQV0w1JFZB6ndDSaGmYoNpKNKoslbRMpKik4ELRakpLnmVWyoiyohAKJqupnsoySV6ivbZrzSuEmWKZsXyXFwlTUyM1YwVYTE1qjEnYCO33Tys_92IqNq_QSiaJdIRYfH65Dvr0tk1Kk9_qyRE66JdFm7cueH3XBfvo0Q7yb9DeZrU1b4GJbtQ7h54r3eCCiQ
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Crystalline+silicon+surface+passivation+investigated+by+thermal+atomic-layer-deposited+aluminum+oxide&rft.jtitle=Chinese+physics+B&rft.au=Hou%2C+Cai-Xia&rft.au=Zheng%2C+Xin-He&rft.au=Jia%2C+Rui&rft.au=Tao%2C+Ke&rft.date=2017-08-01&rft.issn=1674-1056&rft.volume=26&rft.issue=9&rft.spage=98103&rft_id=info:doi/10.1088%2F1674-1056%2F26%2F9%2F098103&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_1056_26_9_098103
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg