Development of 17 kV 4H-SiC PiN diode

The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epila...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 8; pp. 45 - 48
Main Author 黄润华 陶永洪 汪玲 陈刚 柏松 栗锐 李赟 赵志飞
Format Journal Article
LanguageEnglish
Published 01.08.2016
Subjects
4H-SiC
PIN二极管
击穿电压
外延层
开发
数值模拟
电气特性
碳化硅
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ISSN1674-4926
DOI10.1088/1674-4926/37/8/084001

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Summary:The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175/zm with a doping of 2 x 1014 cm-3. With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.
Bibliography:11-5781/TN
4H-SiC; power device; termination; JTE
The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175/zm with a doping of 2 x 1014 cm-3. With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.
ISSN:1674-4926
DOI:10.1088/1674-4926/37/8/084001