Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing

Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 1...

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Published inChinese physics letters Vol. 33; no. 8; pp. 123 - 126
Main Author 申艳艳 张一新 祁婷 乔瑜 贾钰欣 黑鸿君 贺志勇 于盛旺
Format Journal Article
LanguageEnglish
Published 01.08.2016
Subjects
场发射扫描电子显微镜
微晶金刚石
快速退火
电子场发射性能
相变
诱导
金刚石薄膜
铜离子注入
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/33/8/088101

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Abstract Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.
AbstractList Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.
Author 申艳艳 张一新 祁婷 乔瑜 贾钰欣 黑鸿君 贺志勇 于盛旺
AuthorAffiliation Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024
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Cites_doi 10.1016/j.apsusc.2011.05.108
10.1063/1.4770513
10.1146/annurev.matsci.29.1.211
10.1063/1.1564880
10.1103/PhysRevB.74.235434
10.1103/PhysRevB.80.165321
10.1103/PhysRevB.75.195431
10.1063/1.3556741
10.1103/PhysRevB.61.14095
10.1088/0957-4484/17/1/052
10.1016/j.matlet.2014.10.119
10.1103/PhysRevB.74.155429
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Notes Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.
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References 12
13
14
16
17
Lv F X (2) 2003; 32
1
Talapatra S (8) 2006; 17
3
Zhu L L (9) 2015; 24
4
5
6
7
Zhang H (10) 2014; 23
Zeng L (11) 2014; 31
Wang R Z (15) 2002; 31
References_xml – ident: 16
  doi: 10.1016/j.apsusc.2011.05.108
– ident: 5
  doi: 10.1063/1.4770513
– volume: 24
  issn: 1674-1056
  year: 2015
  ident: 9
  publication-title: Chin. Phys.
– volume: 32
  start-page: 383
  year: 2003
  ident: 2
  publication-title: Physics
– ident: 4
  doi: 10.1146/annurev.matsci.29.1.211
– ident: 6
  doi: 10.1063/1.1564880
– ident: 3
  doi: 10.1103/PhysRevB.74.235434
– ident: 1
  doi: 10.1103/PhysRevB.80.165321
– ident: 7
  doi: 10.1103/PhysRevB.75.195431
– ident: 13
  doi: 10.1063/1.3556741
– volume: 23
  issn: 1674-1056
  year: 2014
  ident: 10
  publication-title: Chin. Phys.
– volume: 31
  issn: 0256-307X
  year: 2014
  ident: 11
  publication-title: Chin. Phys. Lett.
– ident: 17
  doi: 10.1103/PhysRevB.61.14095
– volume: 17
  start-page: 305
  issn: 0957-4484
  year: 2006
  ident: 8
  publication-title: Nanotechnology
  doi: 10.1088/0957-4484/17/1/052
– volume: 31
  start-page: 84
  year: 2002
  ident: 15
  publication-title: Physics
– ident: 12
  doi: 10.1016/j.matlet.2014.10.119
– ident: 14
  doi: 10.1103/PhysRevB.74.155429
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SubjectTerms 场发射扫描电子显微镜
微晶金刚石
快速退火
电子场发射性能
相变
诱导
金刚石薄膜
铜离子注入
Title Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing
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