王曦, 吕. 陈. 黄. 刘. 罗. (2016). Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures. Chinese physics B, 25(11), 652-655. https://doi.org/10.1088/1674-1056/25/11/118503
Chicago Style (17th ed.) Citation王曦, 吕凯 陈静 黄瑜萍 刘军 罗杰馨. "Ultra-low Temperature Radio-frequency Performance of Partially Depleted Silicon-on-insulator N-type Metal-oxide-semiconductor Field-effect Transistors with Tunnel Diode Body Contact Structures." Chinese Physics B 25, no. 11 (2016): 652-655. https://doi.org/10.1088/1674-1056/25/11/118503.
MLA (9th ed.) Citation王曦, 吕凯 陈静 黄瑜萍 刘军 罗杰馨. "Ultra-low Temperature Radio-frequency Performance of Partially Depleted Silicon-on-insulator N-type Metal-oxide-semiconductor Field-effect Transistors with Tunnel Diode Body Contact Structures." Chinese Physics B, vol. 25, no. 11, 2016, pp. 652-655, https://doi.org/10.1088/1674-1056/25/11/118503.