Luminescence enhancement from Si-based materials by introducing a photonic crystal double-heterostructure slot waveguide microcavity
We demonstrate a novel SOI-based photonic crystal(PC) double-heterostructure slot waveguide microcavity constructed by cascading three PC slot waveguides with different slot widths,and simulate the luminescence enhancement of sol-gel Er-doped SiO2 filled in the microcavity by finite-difference time-...
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Published in | Optoelectronics letters Vol. 7; no. 4; pp. 266 - 268 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
Heidelberg
Tianjin University of Technology
01.07.2011
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Subjects | |
Online Access | Get full text |
ISSN | 1673-1905 1993-5013 |
DOI | 10.1007/s11801-011-1023-x |
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Summary: | We demonstrate a novel SOI-based photonic crystal(PC) double-heterostructure slot waveguide microcavity constructed by cascading three PC slot waveguides with different slot widths,and simulate the luminescence enhancement of sol-gel Er-doped SiO2 filled in the microcavity by finite-difference time-domain(FDTD) method.The calculated results indicate that a unique sharp resonant peak dominates in the spectrum at the expected telecommunication wavelength of 1.5509 mm,with very high normalized peak intensity of ~108.The electromagnetic field of the resonant mode exhibits the strongest in the microcavity,and decays rapidly to zero along both sides,which means that the resonant mode field is well confined in the microcavity.The simulation results fully verify the enhancement of luminescence by PC double-heterostructure slot waveguide microcavity theoretically,which is a promising way to realize the high-efficiency luminescence of Si-based materials. |
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Bibliography: | We demonstrate a novel SOI-based photonic crystal(PC) double-heterostructure slot waveguide microcavity constructed by cascading three PC slot waveguides with different slot widths,and simulate the luminescence enhancement of sol-gel Er-doped SiO2 filled in the microcavity by finite-difference time-domain(FDTD) method.The calculated results indicate that a unique sharp resonant peak dominates in the spectrum at the expected telecommunication wavelength of 1.5509 mm,with very high normalized peak intensity of ~108.The electromagnetic field of the resonant mode exhibits the strongest in the microcavity,and decays rapidly to zero along both sides,which means that the resonant mode field is well confined in the microcavity.The simulation results fully verify the enhancement of luminescence by PC double-heterostructure slot waveguide microcavity theoretically,which is a promising way to realize the high-efficiency luminescence of Si-based materials. 12-1370/TN Wang Yue**,Wu Yuan-da,Zhang Jia-shun,An Jun-ming,and Hu Xiong-wei Optoelectronics Research and Development Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
ISSN: | 1673-1905 1993-5013 |
DOI: | 10.1007/s11801-011-1023-x |