Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs
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| Published in | Applied physics. A, Materials science & processing Vol. 69; no. 3; pp. 313 - 321 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Berlin
Springer
01.09.1999
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0947-8396 1432-0630 |
| DOI | 10.1007/s003390051007 |
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| Author | Chen, C.-H. Gösele, U.M. Tan, T.Y. |
|---|---|
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| Issue | 3 |
| Keywords | Gallium arsenides Inorganic compounds Donors Doped materials Solid-solid interfaces Diffusion Experimental study Silicon additions Heterostructures Acceptors |
| Language | English |
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| SubjectTerms | Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion; interface formation Exact sciences and technology Physics Self-diffusion and ionic conduction in nonmetals Solid surfaces and solid-solid interfaces Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Transport properties of condensed matter (nonelectronic) |
| Title | Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs |
| Volume | 69 |
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