Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

• Published in: Applied physics. A, Materials science & processing Vol. 69; no. 3; pp. 313 - 321
• Main Authors: Chen, C.-H., Gösele, U.M., Tan, T.Y.
• Format: Journal Article
• Language: English
• Published: Berlin Springer 01.09.1999
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion in solids; Diffusion; interface formation; Exact sciences and technology; Physics; Self-diffusion and ionic conduction in nonmetals; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Transport properties of condensed matter (nonelectronic); Gallium arsenides; Inorganic compounds; Donors; Doped materials; Solid-solid interfaces; Diffusion; Experimental study; Silicon additions; Heterostructures; Acceptors
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s003390051007