On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX - 吴昊 许淼 万光星 朱慧珑 赵利川 童小东 赵超 陈大鹏 叶甜春 (Journal of semiconductors, 2014)
Keywords: Channels; Devices; Dopants; Doping; MOSFET; MOSFETs; Oxides; RDF; Semiconductors; Simulation; 基板; 工程; 掺杂分布; 沟道迁移率; 短沟道效应; 载流子迁移率