叶甜春, 吴. 许. 万. 朱. 赵. 童. 赵. 陈. (2014). On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX. Journal of semiconductors, 35(11), 64-69. https://doi.org/10.1088/1674-4926/35/11/114006
Chicago Style (17th ed.) Citation叶甜春, 吴昊 许淼 万光星 朱慧珑 赵利川 童小东 赵超 陈大鹏. "On Substrate Dopant Engineering for ET-SOI MOSFETs with UT-BOX." Journal of Semiconductors 35, no. 11 (2014): 64-69. https://doi.org/10.1088/1674-4926/35/11/114006.
MLA (9th ed.) Citation叶甜春, 吴昊 许淼 万光星 朱慧珑 赵利川 童小东 赵超 陈大鹏. "On Substrate Dopant Engineering for ET-SOI MOSFETs with UT-BOX." Journal of Semiconductors, vol. 35, no. 11, 2014, pp. 64-69, https://doi.org/10.1088/1674-4926/35/11/114006.
Warning: These citations may not always be 100% accurate.