程鹏飞, 刘. 刘. 王. 陈. 蒋. 袁. (2014). Effect of novel alkaline copper slurry on 300 mm copper global planarization. Journal of semiconductors, 35(9), 171-174. https://doi.org/10.1088/1674-4926/35/9/096003
Chicago Style (17th ed.) Citation程鹏飞, 刘伟娟 刘玉岭 王辰伟 陈国栋 蒋勐婷 袁浩博. "Effect of Novel Alkaline Copper Slurry on 300 Mm Copper Global Planarization." Journal of Semiconductors 35, no. 9 (2014): 171-174. https://doi.org/10.1088/1674-4926/35/9/096003.
MLA (9th ed.) Citation程鹏飞, 刘伟娟 刘玉岭 王辰伟 陈国栋 蒋勐婷 袁浩博. "Effect of Novel Alkaline Copper Slurry on 300 Mm Copper Global Planarization." Journal of Semiconductors, vol. 35, no. 9, 2014, pp. 171-174, https://doi.org/10.1088/1674-4926/35/9/096003.
Warning: These citations may not always be 100% accurate.