Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs - 张春伟 刘斯扬 孙伟锋 周雷雷 张艺 苏巍 张爱军 刘玉伟 胡久利 何骁伟 (Chinese physics letters, 2015)
Keywords: Channels; Degradation; Drains; Field effect transistors; MOSFET; MOSFETs; Saturation; Semiconductor devices; Substrates; 异常; 漏极电流; 热载流子退化; 通道长度; 金属氧化物半导体场效应晶体管; 降解; 饱和