何骁伟, 张. 刘. 孙. 周. 张. 苏. 张. 刘. 胡. (2015). Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs. Chinese physics letters, 32(8), 193-195. https://doi.org/10.1088/0256-307X/32/8/088502
Chicago Style (17th ed.) Citation何骁伟, 张春伟 刘斯扬 孙伟锋 周雷雷 张艺 苏巍 张爱军 刘玉伟 胡久利. "Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in N-Type MOSFETs." Chinese Physics Letters 32, no. 8 (2015): 193-195. https://doi.org/10.1088/0256-307X/32/8/088502.
MLA (9th ed.) Citation何骁伟, 张春伟 刘斯扬 孙伟锋 周雷雷 张艺 苏巍 张爱军 刘玉伟 胡久利. "Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in N-Type MOSFETs." Chinese Physics Letters, vol. 32, no. 8, 2015, pp. 193-195, https://doi.org/10.1088/0256-307X/32/8/088502.