Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks - 徐昊 杨红 王艳蓉 王文武 万光星 任尚清 罗维春 祁路伟 赵超 陈大鹏 刘新宇 叶甜春 (Journal of semiconductors, 2016)
Keywords: Asymmetry; Dielectric breakdown; Electrodes; Gates; Semiconductors; Spreading; Stacks; Tunneling; 串联电阻; 介质击穿; 堆叠; 时间; 电击穿特性; 电阻效应; 超薄; 金属栅