Dynamic resistive switching in a three-terminal device based on phase separated manganites

A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented s...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 24; no. 3; pp. 293 - 297
Main Author 王志强 颜志波 秦明辉 高兴森 刘俊明
Format Journal Article
LanguageEnglish
Published 01.03.2015
Subjects
Computer simulation
Devices
Electric potential
Electronics
Ferromagnetism
Filaments
Manganites
Switching
Voltage
三端器件
动态电阻
开关时间
模拟显示
相分离
端子
装置
锰氧化物
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/3/037101

Cover

More Information
Summary:A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state（HRS） to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.
Bibliography:Wang Zhi-Qiang, Yan Zhi-Bo, Qin Ming-Hui, Gao Xing-Sen, and Liu Jun-Ming（ a）Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China; b） Institute for Advanced Materials and Laboratory for Quantum Engineering and Materials, South China Normal University, Guangzhou 510006, China
A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state（HRS） to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.
11-5639/O4
phase separation,dielectrophoresis,resistive switching,memory device
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/3/037101