刘荧, 包. 邵. 谭. 王. 吴. 文. 赵. 唐. 张. 郭. 王. (2015). Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors. Chinese physics B, 24(9), 20-24. https://doi.org/10.1088/1674-1056/24/9/098103
Chicago Style (17th ed.) Citation刘荧, 包蓓 邵宪一 谭璐 王文河 吴越珅 文理斌 赵家庆 唐伟 张为民 郭小军 王顺. "Electronic Mobility in the High-carrier-density Limit of Ion Gel Gated IDTBT Thin Film Transistors." Chinese Physics B 24, no. 9 (2015): 20-24. https://doi.org/10.1088/1674-1056/24/9/098103.
MLA (9th ed.) Citation刘荧, 包蓓 邵宪一 谭璐 王文河 吴越珅 文理斌 赵家庆 唐伟 张为民 郭小军 王顺. "Electronic Mobility in the High-carrier-density Limit of Ion Gel Gated IDTBT Thin Film Transistors." Chinese Physics B, vol. 24, no. 9, 2015, pp. 20-24, https://doi.org/10.1088/1674-1056/24/9/098103.
Warning: These citations may not always be 100% accurate.