DC Gain Analysis of Scaled CMOS Op Amp in Sub-100 nm Technology Nodes： A Research Based on Channel Length Modulation Effect - 程嘉 蒋建飞 蔡琪玉 (Shanghai jiao tong da xue xue bao, 2009)
Keywords: 32纳米; Architecture; CMOS运算放大器; Computer Science; Electrical Engineering; Engineering; Life Sciences; Materials Science; 互补金属氧化物半导体; 技术节点; 沟道长度; 直流增益; 调制效应; 金属氧化物半导体场效应晶体管; TN 402; technology node; modeling; simulation; complementary metal-oxide-semiconductor (CMOS) analog integrated circuits; operational amplifiers; analog circuits; TN 432