Hot-carrier effects on irradiated deep submicron NMOSFET

We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow cha...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 7; pp. 52 - 55
Main Author 崔江维 郑齐文 余学峰 丛忠超 周航 郭旗 文林 魏莹 任迪远
Format Journal Article
LanguageEnglish
Published 01.07.2014
Subjects
Channels
Charge
Degradation
Devices
Electric charge
Ionization
Irradiation
NMOSFET
NMOS器件
Semiconductors
几何形状
深亚微米
热载流子效应
热载流子退化
辐照
陷阱电荷
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ISSN1674-4926
DOI10.1088/1674-4926/35/7/074004

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Summary:We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.
Bibliography:F ray irradiation; deep submicron; hot-carrier effect
Cui Jiangwei, Zheng Qiwen, Yu Xuefeng, Cong Zhongchao, Zhou Hang, Guo Qi, Wen Lin, Wei Ying, Ren Diyuan（ 1 Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics ＆ Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China 2University of Chinese Academy of Sciences, Beijing 100049, China）
11-5781/TN
We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/7/074004