任迪远, 崔. 郑. 余. 丛. 周. 郭. 文. 魏. (2014). Hot-carrier effects on irradiated deep submicron NMOSFET. Journal of semiconductors, 35(7), 52-55. https://doi.org/10.1088/1674-4926/35/7/074004
Chicago Style (17th ed.) Citation任迪远, 崔江维 郑齐文 余学峰 丛忠超 周航 郭旗 文林 魏莹. "Hot-carrier Effects on Irradiated Deep Submicron NMOSFET." Journal of Semiconductors 35, no. 7 (2014): 52-55. https://doi.org/10.1088/1674-4926/35/7/074004.
MLA (9th ed.) Citation任迪远, 崔江维 郑齐文 余学峰 丛忠超 周航 郭旗 文林 魏莹. "Hot-carrier Effects on Irradiated Deep Submicron NMOSFET." Journal of Semiconductors, vol. 35, no. 7, 2014, pp. 52-55, https://doi.org/10.1088/1674-4926/35/7/074004.
Warning: These citations may not always be 100% accurate.