ESD protection design for the gate oxide of an RF-LDMOS - 姜一波 杜寰 曾传滨 韩郑生 (Journal of semiconductors, 2012)
Keywords: Diffusion; Electric potential; ESD保护; Gates; Metal oxide semiconductors; NMOS; Oxides; Semiconductors; Simulation; Voltage; 保护设计; 双扩散; 栅氧化层; 管理层; 金属氧化物半导体; 静电放电