Analytical model for high-voltage SOI device with composite-k dielectric buried layer - 范杰 张波 罗小蓉 汪志刚 李肇基 (Journal of semiconductors, 2013)
Keywords: Computer simulation; Devices; Dielectrics; Electric potential; Mathematical analysis; Modulation; Semiconductors; Silicon nitride; SOI器件; 仿真结果; 低k电介质; 埋层; 复合介电常数; 模型开发; 模型显示; 高电压