Investigation of Creep Failure in Ag-4Pd Bonding Wire under Dynamic Mechanical Analysis Tests

Ag-alloy wire is of particular interest in high power integrated circuits (ICs) due to its superior physical properties, but studies on creep failure in Ag-alloy wire are extremely sparse. This paper investigated the creep behavior of the widely used Ag-4Pd bonding wire at tensile stress levels of 2...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 13; no. 12; p. 1
Main Authors Chen, Chun-Hao, Chiang, Meng-Ting, Chuang, Tung-Han
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 01.12.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Online AccessGet full text
ISSN2156-3950
2156-3985
DOI10.1109/TCPMT.2023.3336639

Cover

Abstract Ag-alloy wire is of particular interest in high power integrated circuits (ICs) due to its superior physical properties, but studies on creep failure in Ag-alloy wire are extremely sparse. This paper investigated the creep behavior of the widely used Ag-4Pd bonding wire at tensile stress levels of 20-80 MPa at constant temperature and in the temperature range of 300 °C to 400 °C at constant tensile stress. The steady-state creep flow behavior was analyzed through fitting of the Arrhenius power-law creep equation, and the rate-dependent process of creep deformation was found to be dislocation climb-controlled. The activation energy of creep in Ag-4Pd bonding wire is 133.86 kJ/mol within this temperature range, suggesting that fast diffusion paths could be involved. Results of cross-sectional analysis of the brittle fractured wire correlate with the kinetic analysis from a phenomenological point of view, indicating diffusion paths through grain boundaries.
AbstractList Ag-alloy wire is of particular interest in high-power integrated circuits (ICs) due to its superior physical properties, but studies on creep failure in Ag-alloy wire are extremely sparse. This article investigated the creep behavior of the widely used Ag-4Pd bonding wire at tensile stress levels of 20–80 MPa at constant temperature and in the temperature range of 300 °C–400 °C at constant tensile stress. The steady-state creep flow behavior was analyzed through fitting the Arrhenius power-law creep equation, and the rate-dependent process of creep deformation was found to be dislocation climb-controlled. The activation energy of creep in Ag-4Pd bonding wire is 133.86 kJ/mol within this temperature range, suggesting that fast diffusion paths could be involved. Results of the cross-sectional analysis of the brittle fractured wire correlate with the kinetic analysis from a phenomenological point of view, indicating diffusion paths through grain boundaries.
Ag-alloy wire is of particular interest in high power integrated circuits (ICs) due to its superior physical properties, but studies on creep failure in Ag-alloy wire are extremely sparse. This paper investigated the creep behavior of the widely used Ag-4Pd bonding wire at tensile stress levels of 20-80 MPa at constant temperature and in the temperature range of 300 °C to 400 °C at constant tensile stress. The steady-state creep flow behavior was analyzed through fitting of the Arrhenius power-law creep equation, and the rate-dependent process of creep deformation was found to be dislocation climb-controlled. The activation energy of creep in Ag-4Pd bonding wire is 133.86 kJ/mol within this temperature range, suggesting that fast diffusion paths could be involved. Results of cross-sectional analysis of the brittle fractured wire correlate with the kinetic analysis from a phenomenological point of view, indicating diffusion paths through grain boundaries.
Author Chiang, Meng-Ting
Chen, Chun-Hao
Chuang, Tung-Han
Author_xml – sequence: 1
  givenname: Chun-Hao
  orcidid: 0000-0001-7887-235X
  surname: Chen
  fullname: Chen, Chun-Hao
  organization: International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Taiwan
– sequence: 2
  givenname: Meng-Ting
  surname: Chiang
  fullname: Chiang, Meng-Ting
  organization: Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
– sequence: 3
  givenname: Tung-Han
  orcidid: 0000-0001-6804-9036
  surname: Chuang
  fullname: Chuang, Tung-Han
  organization: United Microelectronics Co, UMC, Hsinchu Science Park, Hsinchu, Taiwan
BookMark eNpNkE1PAjEQhhujiYj8AeOhiefFfu1Hj7iKkkDksMaTaUp3Fkugiy1rwr-3CDHOZSaT931n8lyhc9c6QOiGkiGlRN5X5XxWDRlhfMg5zzIuz1CP0TRLuCzS8785JZdoEMKKxEoLkhPeQx8T9w1hZ5d6Z1uH2waXHmCLx9quOw_YOjxaJmJe44fW1dYt8buN687V4PHj3umNNXgG5lM7a_Qaj5xe74MNuIqp4RpdNHodYHDqffQ2fqrKl2T6-jwpR9PEMJHvEioNSzMNEpgESmueE5HVopFSCih0bQgVWSMWuRE6F5ARUUhIJSx0U-RFDryP7o65W99-dfGyWrWdj68ExSSlohBCyKhiR5XxbQgeGrX1dqP9XlGiDiTVL0l1IKlOJKPp9miyAPDPwHmaR80PVb1wTw
CODEN ITCPC8
Cites_doi 10.1016/0079-6425(68)90024-8
10.1016/s0026-2714(03)00019-2
10.1063/1.1700021
10.1007/s11664-012-2385-y
10.1016/j.jallcom.2022.165266
10.1016/j.microrel.2019.113460
10.1109/jestpe.2019.2918941
10.1007/978-3-319-99256-3
10.1016/0001-6160(78)90025-1
10.1016/0001-6160(69)90132-1
10.1108/13565360710779154
10.1109/ectc.2017.134
10.1109/tcpmt.2020.2988129
10.1007/s11664-020-08523-x
10.1109/ias.2005.1518549
10.1088/0953-2048/9/5/014
10.1016/j.microrel.2022.114786
10.1109/tie.2011.2114313
10.1007/s11664-012-1903-2
10.1063/1.4974154
10.1109/tpel.2020.2973312
10.1109/eptc.2017.8277544
10.1109/eurosime56861.2023.10100802
10.1520/e0008_e0008m-13a
10.1002/pssb.19700390231
10.1016/0022-5096(94)00059-e
10.1088/0370-1298/62/1/308
10.1007/s10854-021-07474-1
10.1016/j.msea.2013.05.001
10.23919/icep.2017.7939337
10.1007/s11661-002-0090-9
10.1080/01418618608244022
10.1007/s11661-018-4848-0
10.1021/j100806a075
10.1016/j.microrel.2021.114185
10.7449/1994/superalloys_1994_557_565
10.1016/0001-6160(80)90001-2
10.1109/htemds.1998.730695
10.3390/met9121345
10.1016/0001-6160(68)90033-3
ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023
DBID 97E
RIA
RIE
AAYXX
CITATION
7SP
8FD
F28
FR3
L7M
DOI 10.1109/TCPMT.2023.3336639
DatabaseName IEEE All-Society Periodicals Package (ASPP) 2005–Present
IEEE All-Society Periodicals Package (ASPP) 1998–Present
IEEE Electronic Library (IEL)
CrossRef
Electronics & Communications Abstracts
Technology Research Database
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Engineering Research Database
Technology Research Database
Advanced Technologies Database with Aerospace
ANTE: Abstracts in New Technology & Engineering
Electronics & Communications Abstracts
DatabaseTitleList Engineering Research Database

Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Electronic Library (IEL)
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2156-3985
EndPage 1
ExternalDocumentID 10_1109_TCPMT_2023_3336639
10335733
Genre orig-research
GrantInformation_xml – fundername: Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan
  grantid: 112AO03A
  funderid: 10.13039/501100021806
GroupedDBID 0R~
4.4
6IK
97E
AAJGR
AARMG
AASAJ
AAWTH
ABAZT
ABQJQ
ABVLG
ACIWK
AENEX
AGQYO
AHBIQ
AKJIK
AKQYR
ALMA_UNASSIGNED_HOLDINGS
ATWAV
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
EBS
IFIPE
IPLJI
JAVBF
M43
OCL
RIA
RIE
RNS
AAYXX
AGSQL
CITATION
EJD
7SP
8FD
F28
FR3
L7M
ID FETCH-LOGICAL-c247t-19c256ae9e29e11d37046d4f9994e8adc0146f4b7c4a74e60489e59ebaf8787e3
IEDL.DBID RIE
ISSN 2156-3950
IngestDate Mon Jun 30 10:08:01 EDT 2025
Wed Oct 01 04:37:46 EDT 2025
Wed Aug 27 02:37:37 EDT 2025
IsPeerReviewed true
IsScholarly true
Issue 12
Language English
License https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
https://doi.org/10.15223/policy-029
https://doi.org/10.15223/policy-037
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c247t-19c256ae9e29e11d37046d4f9994e8adc0146f4b7c4a74e60489e59ebaf8787e3
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ORCID 0000-0001-6804-9036
0000-0001-7887-235X
PQID 2911484449
PQPubID 1006342
PageCount 1
ParticipantIDs ieee_primary_10335733
proquest_journals_2911484449
crossref_primary_10_1109_TCPMT_2023_3336639
ProviderPackageCode CITATION
AAYXX
PublicationCentury 2000
PublicationDate 2023-12-01
PublicationDateYYYYMMDD 2023-12-01
PublicationDate_xml – month: 12
  year: 2023
  text: 2023-12-01
  day: 01
PublicationDecade 2020
PublicationPlace Piscataway
PublicationPlace_xml – name: Piscataway
PublicationTitle IEEE transactions on components, packaging, and manufacturing technology (2011)
PublicationTitleAbbrev TCPMT
PublicationYear 2023
Publisher IEEE
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: IEEE
– name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
References ref13
ref35
ref12
ref34
ref15
ref37
ref14
ref36
ref11
ref10
ref32
ref2
ref1
ref17
ref39
ref16
ref38
ref19
ref18
Frost (ref30) 1982
Bird (ref31) 1969
ref24
ref45
ref26
ref25
ref20
ref42
ref41
ref44
ref21
ref43
Leverant (ref33) 1966; 59
ref28
Schmidt (ref23)
ref27
ref29
ref8
Junghaenel (ref22)
ref7
ref9
ref4
ref3
ref6
ref5
ref40
References_xml – ident: ref39
  doi: 10.1016/0079-6425(68)90024-8
– ident: ref6
  doi: 10.1016/s0026-2714(03)00019-2
– ident: ref36
  doi: 10.1063/1.1700021
– ident: ref25
  doi: 10.1007/s11664-012-2385-y
– ident: ref45
  doi: 10.1016/j.jallcom.2022.165266
– ident: ref20
  doi: 10.1016/j.microrel.2019.113460
– ident: ref26
  doi: 10.1109/jestpe.2019.2918941
– volume: 59
  start-page: 890
  year: 1966
  ident: ref33
  article-title: The high-temperature steady-state creep of pure silver and internally oxidized silver-magnesium alloys
  publication-title: Trans. ASM
– start-page: 1
  volume-title: Proc. PCIM Eur. Int. Exhib. Conf. Power Electron., Intell. Motion, Renew. Energy Energy Manage.
  ident: ref22
  article-title: Investigation on isolated failure mechanisms in active power cycle testing
– ident: ref4
  doi: 10.1007/978-3-319-99256-3
– ident: ref9
  doi: 10.1016/0001-6160(78)90025-1
– ident: ref41
  doi: 10.1016/0001-6160(69)90132-1
– ident: ref1
  doi: 10.1108/13565360710779154
– start-page: 1
  volume-title: Proc. 7th Int. Conf. Integr. Power Electron. Syst. (CIPS)
  ident: ref23
  article-title: Separating failure modes in power cycling tests
– ident: ref14
  doi: 10.1109/ectc.2017.134
– ident: ref15
  doi: 10.1109/tcpmt.2020.2988129
– ident: ref28
  doi: 10.1007/s11664-020-08523-x
– start-page: 1
  volume-title: Quantitative Relation Between Microstructure Properties
  year: 1969
  ident: ref31
  article-title: Correlations between high-temperature creep behavior and structure
– ident: ref7
  doi: 10.1109/ias.2005.1518549
– ident: ref10
  doi: 10.1088/0953-2048/9/5/014
– ident: ref16
  doi: 10.1016/j.microrel.2022.114786
– ident: ref5
  doi: 10.1109/tie.2011.2114313
– ident: ref12
  doi: 10.1007/s11664-012-1903-2
– ident: ref17
  doi: 10.1063/1.4974154
– ident: ref21
  doi: 10.1109/tpel.2020.2973312
– ident: ref3
  doi: 10.1109/eptc.2017.8277544
– ident: ref24
  doi: 10.1109/eurosime56861.2023.10100802
– ident: ref29
  doi: 10.1520/e0008_e0008m-13a
– ident: ref35
  doi: 10.1002/pssb.19700390231
– ident: ref43
  doi: 10.1016/0022-5096(94)00059-e
– ident: ref38
  doi: 10.1088/0370-1298/62/1/308
– ident: ref11
  doi: 10.1007/s10854-021-07474-1
– volume-title: Deformation-Mechanism Maps: The Plasticity and Creep of Metals and Ceramics
  year: 1982
  ident: ref30
– ident: ref13
  doi: 10.1016/j.msea.2013.05.001
– ident: ref19
  doi: 10.23919/icep.2017.7939337
– ident: ref8
  doi: 10.1007/s11661-002-0090-9
– ident: ref34
  doi: 10.1080/01418618608244022
– ident: ref18
  doi: 10.1007/s11661-018-4848-0
– ident: ref32
  doi: 10.1021/j100806a075
– ident: ref27
  doi: 10.1016/j.microrel.2021.114185
– ident: ref44
  doi: 10.7449/1994/superalloys_1994_557_565
– ident: ref42
  doi: 10.1016/0001-6160(80)90001-2
– ident: ref2
  doi: 10.1109/htemds.1998.730695
– ident: ref40
  doi: 10.3390/met9121345
– ident: ref37
  doi: 10.1016/0001-6160(68)90033-3
SSID ssj0000580703
Score 2.3179846
Snippet Ag-alloy wire is of particular interest in high power integrated circuits (ICs) due to its superior physical properties, but studies on creep failure in...
Ag-alloy wire is of particular interest in high-power integrated circuits (ICs) due to its superior physical properties, but studies on creep failure in...
SourceID proquest
crossref
ieee
SourceType Aggregation Database
Index Database
Publisher
StartPage 1
SubjectTerms Ag-alloy bonding wire
Arrhenius power-law creep
Bonding
Creep
Creep strength
Deformation
Diffusion rate
Dislocation mobility
Dynamic mechanical analysis
Equilibrium flow
failure analysis
Grain boundaries
Integrated circuits
Metal-metal bonding
Packaging
Physical properties
Power integrated circuits
Reliability
Steady state creep
Tensile stress
Wire
Wires
Title Investigation of Creep Failure in Ag-4Pd Bonding Wire under Dynamic Mechanical Analysis Tests
URI https://ieeexplore.ieee.org/document/10335733
https://www.proquest.com/docview/2911484449
Volume 13
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
journalDatabaseRights – providerCode: PRVIEE
  databaseName: IEEE Electronic Library (IEL)
  customDbUrl:
  eissn: 2156-3985
  dateEnd: 99991231
  omitProxy: false
  ssIdentifier: ssj0000580703
  issn: 2156-3950
  databaseCode: RIE
  dateStart: 20110101
  isFulltext: true
  titleUrlDefault: https://ieeexplore.ieee.org/
  providerName: IEEE
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT8MwDI4YJzjwRoyXcuCGUtomXZrjNJgmpCEOm7QLqtrERQipQ2O78Oux0xYNEBK3HpIoiu34c2p_ZuzKmRi0Sa1A3-GESmMrDKqJyJNSIUKV6FR9guxDbzRV97Nk1hSr-1oYAPDJZxDQp_-X7-Z2RU9laOFSEn9fh3W0NnWx1teDSpikpL7UTA5jEiFNErZFMqG5mQwex5OAeoUHUkp0s-abI_KdVX5dx97HDHfZQ7u7OrXkNVgti8B-_CBu_Pf299hOgzZ5v1aPfbYB1QHbXuMgPGRPa0wb84rPSz5YALzxYf5CGev8peL9Z6EeHacOxDiFU8Isp9qzBb-t-9nzMVABMcmbtywnfIKrvh-x6fBuMhiJpueCsLHSSxEZiyAoBwOxgShyUmMA7VSJOFJBmjtLZDOlKrRVuVbQwwvAQGKgyMsUbR_kMdus5hWcMO50L9Q2kUWkEhXpMkVonBr0lA7PIC7DLrtuBZC91dQamQ9JQpN5cWUkrqwRV5cd0YmujawPs8vOW6Fljfm9Z7GhME8pZU7_mHbGtmj1OjHlnG0uFyu4QHixLC69Wn0CaC_Iiw
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Nb9QwEB2V9lA4tKUUsVCKD9yQQxI76_hYLV0tbXfVQyr1gqLEnqAKKVttdy_8emacpFpASNxyiPMxM_bM2PPeAHz0NkVjcyfJd3ip89RJS2Yiq6zRFKEqcqqhQHYxnt3qy7vsrgerBywMIobiM4z4Mpzl-6Xb8FYZzXClmL_vGexllFaYDq71tKUSZzkbMLeTo6xEKpvFA0wmtp-Lyc28iLhbeKSUIkdrf3NFobfKXwty8DLTQ1gM39cVl_yINus6cj__oG787x84goM-3hTnnYG8hB1sj-HFFgvhK_i2xbWxbMWyEZMV4oOYVvdcsy7uW3H-XeobL7gHMQ0RXDIrGH22El-6jvZijgwhZo2LgedEFPTUxxO4nV4Uk5nsuy5Il2qzlol1FAZVaDG1mCReGUqhvW4oktSYV94x3Uyja-N0ZTSOaQmwmFmsqyan2Y_qNey2yxbfgPBmHBuXqTrRmU5Mk1NwnFvylZ5kkDbxCD4NCigfOnKNMiQlsS2DukpWV9mrawQnLNGtOzthjuB0UFrZT8DHMrWc6Gmt7dt_DPsA-7Nifl1ef11cvYPn_KauTOUUdterDb6nYGNdnwUT-wUhB8vc
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Investigation+of+Creep+Failure+in+Ag-4Pd+Bonding+Wire+Under+Dynamic+Mechanical+Analysis+Tests&rft.jtitle=IEEE+transactions+on+components%2C+packaging%2C+and+manufacturing+technology+%282011%29&rft.au=Chun-Hao%2C+Chen&rft.au=Meng-Ting%2C+Chiang&rft.au=Tung-Han%2C+Chuang&rft.date=2023-12-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=2156-3950&rft.eissn=2156-3985&rft.volume=13&rft.issue=12&rft.spage=1944&rft_id=info:doi/10.1109%2FTCPMT.2023.3336639&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2156-3950&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2156-3950&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2156-3950&client=summon