Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

• Published in: IEEE transactions on power electronics Vol. 39; no. 8; pp. 9614 - 9628
• Main Authors: Janabi, Ameer, Shillaber, Luke, Ying, Wucheng, Mu, Wei, Hu, Borong, Jiang, Yunlei, Iosifidis, Nikolaos, Ran, Li, Long, Teng
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Advanced packaging of power electronics; Circuit boards; Copper; Design standards; Electrical insulation; Electrical resistivity; Electronic packaging; embedded die; Etching; Inductance; integrated power electronics; Logic gates; Printed circuits; Silicon carbide; standard cell; Substrates; Thermal conductivity
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2024.3396779

This article proposes a new power electronic packaging for discrete dies, namely, a standard cell, which consists of a step-etched active metal brazing (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC mosfet devices. The standard cell has a stray power loop inductance of less than <inline-formula><tex-math notation="LaTeX">\text{1}\,\text{nH}</tex-math></inline-formula> and a gate loop inductance of less than <inline-formula><tex-math notation="LaTeX">\text{1.5}\,\text{nH}</tex-math></inline-formula>. The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This article presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.